상세정보
학술지
Insulating Oxide Buffer Layer Formed by Sol-Gel Method for Planarization of Stainless Steel Substrate of a-Si:H Thin Film Solar Cell
- 발행일
- 201204
- 출처
- Materials Research Bulletin, v.47 no.10, pp.3044-3047
- ISSN
- 0025-5408
- 출판사
- Pergamon
- 협약과제
- 11MB7300, 유연성 철강소재기판상에서 효율13%를 갖는 Si/SiGe 탠덤 박막태양전지개발, 윤선진
- 초록
- The planarization of flexible stainless steel (SS) foils was investigated for the application of flexible solar cells. The sol-gel SiO 2 film containing nanoparticles was evaluated for a buffer layer on SS foils, and methods to improve the adhesion of SiO 2 film to SS foil were studied. The improvement of adhesion by adding Al 2O 3 matrix was discussed by analyzing the interface between Al 2O 3- SiO 2 film and SS foil. The usefulness of sol-gel buffer layer was also verified by comparing the performance of single junction a-Si:H thin film solar cells fabricated on bare SS foil and buffer layer-coated SS foil. The cell characteristics such as V oc, J sc, fill factor, and efficiency were all improved by adopting the buffer layer. The efficiency of the cell on buffer layer-coated and non-textured SS foil was 6.1% whereas the efficiency was 4.9% on bare SS foil. © 2012 Elsevier Ltd. All rights reserved.
- KSP 제안 키워드
- J sc, O 3, Open circuit voltage(VOC), Oxide buffer layer, SiO 2, Single junction, Stainless steel(SUS316), Stainless steel substrate, a-Si:H thin film solar cell, fill factor, flexible solar cells