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학술지 Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
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저자
임종원, 안호균, 김성일, 강동민, 이종민, 민병규, 이상흥, 윤형섭, 주철원, 김해천, 문재경, 남은수, 박형무
발행일
201311
출처
Thin Solid Films, v.547, pp.106-110
ISSN
0040-6090
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.tsf.2013.04.103
협약과제
12DB1200, GaN 트랜지스터 기반의 Ku-Band 고출력 증폭기 개발, 임종원
초록
We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 횇 thick were deposited by plasma-enhanced chemical vapor deposition at 260 C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (fT) of 18 GHz, and a maximum oscillation frequency (fmax) of 66 GHz. © 2013 Elsevier B.V.
키워드
AlGaN/GaN, Cutoff frequency, Gate, High-electron-mobility transistor, Maximum oscillation frequency, Plasma, Recess
KSP 제안 키워드
18 GHz, 6 GHz, Breakdown voltage(BDV), Cut-off frequency, Double plasma, High electron mobility transistor(HEMT), Nitride layer, Plasma process, Plasma-enhanced chemical vapor deposition(PECVD), Silicon Nitride, Transistor devices