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학술지 Nonvolatile Memory Performance Improvements for Solution-Processed Thin-Film Transistors with Composition-Modified In-Zn-Ti-O Active Channel and Ferroelectric Copolymer Gate Insulator
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저자
박준용, 정순원, 윤성민
발행일
201309
출처
Organic Electronics, v.14 no.9, pp.2148-2157
ISSN
1566-1199
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.orgel.2013.05.008
협약과제
13VB1900, 에너지 절감을 위한 7인치기준 2W급 환경적응 디스플레이 신모드 핵심 원천 기술 개발, 추혜용
초록
The nonvolatile memory thin-film transistors (M-TFTs) using a solution-processed indiumzinc-titanium oxide (IZTiO) active channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator were fabricated and characterized to elucidate the relationships between the IZTiO channel composition and the memory performances such as program speed and data retention. The compositions of the spin-coated IZTiO layers were modified with different Ti amounts of 0, 2, 5, and 10 mol%. The carrier concentration of IZTiO channel layer was effectively modulated by the incorporated Ti amounts and the defect densities within the channel were effectively reduced by Ti incorporation. The MTFT fabricated with IZTiO channel with 2-mol% Ti composition exhibited the best overall device performances, in which the μFE, SS, MW, and programmed Ion/off were obtained to be 23.6 cm2 V -1 s-1, 701 mV/decade, 11.8 V, and 1.2 × 10 5, respectively. Furthermore, thanks to the suitable amounts of Ti incorporation into the IZO, the improved program speed and data retention properties were successfully confirmed. © 2013 Elsevier B.V.
키워드
Ferroelectric gate insulator, In-Zn-Ti-O, Memory thin-film transistor, Oxide semiconductor, P(VDF-TrFE)
KSP 제안 키워드
Active channel, Carrier concentration, Channel layer, Ferroelectric gate, First Stokes(S1), Gate insulator, Memory performance, Non-Volatile Memory(NVM), Oxide semiconductor, Retention properties, Solution-processed