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학술지 The Characteristics of Cu2O Thin Films Deposited Using RF-Magnetron Sputtering Method with Nitrogen-Ambient
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저자
이성현, 윤선진, 임정욱
발행일
201312
출처
ETRI Journal, v.35 no.6, pp.1156-1159
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.13.0213.0216
협약과제
12MB2900, 선택적 투과막 및 이종접합창을 이용한 투과성 a-SiGe 투명 태양전지 개발, 임정욱
초록
We investigate the characteristics of Cu2O thin films deposited through the addition of N2 gas. The addition of N2 gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase (6CuO쨌Cu2O) appears at a N2 flow rate of 1 sccm, and a Cu2O (200) phase is then preferentially grown at a higher feeding amount of N2. The optical and electrical properties of Cu2O thin films are improved with a sufficient N2 flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of 1.5×10-2 S/cm are obtained. These high-quality Cu2O thin films are expected to be applied to Cu2O-based heterojunction solar cells and optical functional films. © 2013 ETRI.
키워드
Cu O 2, Cuprite, High energy gap, Nitrogen, Sputter
KSP 제안 키워드
Band-gap energy, Cu O 2, Electrical and optical properties, Energy gap, Flow rate, Functional films, Heterojunction solar cells, High-quality, Optical and electrical properties, Phase change, RF-magnetron sputtering method