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학술지 Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
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저자
윤성민, 변춘원, 양신혁, 박상희, 조두희, 정순원, 강승열, 황치선
발행일
201002
출처
IEEE Electron Device Letters, v.31 no.2, pp.138-140
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2009.2036137
협약과제
09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
초록
A two-transistor-type nonvolatile memory cell composed of one-access and one-memory thin-film transistors (TFTs) was demonstrated. ZnO and poly(vinylidene fluoride-trifluoroethylene) were employed as semiconducting channels for both TFTs and ferroelectric-gate insulator for memory TFT, respectively, in which the cell structures and fabrication procedures were so carefully designed and optimized as to effectively incorporate both TFTs on the same glass substrate without any critical process damage even below 200 °C. The fabricated memory cell successfully showed the write and nondestructive readout operations. © 2006 IEEE.
키워드
Nonvolatile memory (NVM), Oxide semiconductor, Polymeric ferroelectric, Thin-film transistor (TFT)
KSP 제안 키워드
Cell structure, Gate insulator, Glass substrate, Non-Volatile Memory(NVM), Nondestructive readout operation, Oxide semiconductor, T-Type, Thin-Film Transistor(TFT), Transistor-type, memory cell, thin film(TF)