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학술지 Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
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저자
윤성민, 양신혁, 정순원, 변춘원, 박상희, 황치선, Hiroshi Ishiwara
발행일
201002
출처
Electrochemical and Solid-State Letters, v.13 no.5, pp.H141-H143
ISSN
1099-0062
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/1.3312900
협약과제
09MB2900, 투명전자 소자를 이용한 스마트 창, 조경익
초록
A solution-process-based nonvolatile memory thin-film transistor (MTFT) was demonstrated to realize simple and low cost memory devices for future large-area electronics. The semiconducting active channel of zinc indium oxide (ZIO) and a gate insulator of poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] were prepared by a spin-coating method using corresponding precursor solutions. The obtained ZIO film was amorphous and showed an excellent transmittance (~90%) in the visible range. The MTFT showed a turn-on voltage shift originating from the ferroelectric nature of P(VDF-TrFE), a field-effect mobility of 3.3 cm2 V-1 s-1, and a subthreshold swing of 0.86 V/dec with an on/off current ratio of 8.4× 106. © 2010 The Electrochemical Society.
KSP 제안 키워드
Active channel, Ferroelectric gate, First Stokes(S1), Gate insulator, Low-cost, Non-Volatile Memory(NVM), ON/OFF current ratio, Process-based, Solution-processed, Thin-Film Transistor(TFT), Turn-on voltage