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학술지 Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
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저자
정순원, 구재본, 박찬우, 나복순, 오지영, 이상석, 구경완
발행일
201509
출처
Journal of Vacuum Science and Technology B, v.33 no.5, pp.1-4
ISSN
1071-1023
출판사
American Vacuum Society (AVS)
DOI
https://dx.doi.org/10.1116/1.4927367
협약과제
15MB1600, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
초록
The authors demonstrated flexible memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomer substrates. The carrier mobility, memory on/off ratio, and subthreshold swing of the flexible MTFTs showed 21cm2V-1s-1, 107, and 0.5-1V/decade, respectively. The memory window of 13V at 짹20V programming was confirmed for the device without any interface layer. These obtained values did not significantly change when the substrate was bent with a radius of curvature of 10mm. The memory on/off ratio was initially 5×104 and maintained at 102 even after a lapse of 3600s. The fabricated MTFTs exhibited encouraging characteristics on the elastomer that are sufficient to realize mechanically flexible nonvolatile memory devices.
KSP 제안 키워드
Amorphous oxide, Carrier mobility, Flexible nonvolatile memory, Indium gallium zinc oxide, Non-Volatile Memory(NVM), Nonvolatile memory devices, Oxide channel, Radius of curvature, Thin-Film Transistor(TFT), Zinc oxide(ZnO), elastomer substrate