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학술지 Effect of NaF Precursor on Preferential Growth of Cu(In,Ga)Se2 Thin Films
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저자
조대형, 정용덕, 김경현, 김제하
발행일
201205
출처
한국물리학회, v.60 no.10, pp.1517-1520
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.60.1517
협약과제
11FB1300, 초경량 CIGS 박막 태양전지 공정 기술 개발, 정용덕
초록
Abstact: We report the effect of NaF precursors on the preferential orientation of Cu(In,Ga)Se 2 (CIGS) thin films. The CIGS films were grown on NaF/Mo/glass and Mo/glass substrates by using a multi-stage co-evaporation method. The 23-nm-thick NaF precursors were prepared by using an evaporation technique. The CIGS film with a NaF precursor shows a much higher I(112)/I(220/204) XRD peak intensity ratio than the film without it. The (112)- and (220/204)-oriented CIGS films were obtained from highly (0006)- and (30-30)-oriented (In,Ga) 2Se 3 (IGS) films, respectively. The IGS (0006) orientation was enhanced by the NaF precursor because the lattice misfit of IGS (0006) plane on NaF (-2.3%) was lower than that of IGS (0006) plane on Mo (5.1%) whereas the lattice misfit of IGS (30-30) plane on NaF (1.3%) was higher than that of IGS (30-30) plane on Mo (0.1%). The degree of lattice misfit is believed to play an important role in the preferential growth of CIGS films in the (112) orientation. © 2012 The Korean Physical Society.
키워드
CIGS thin film, Lattice misfit, NaF precursor, Preferential orientation, X-ray diffraction
KSP 제안 키워드
CIGS film, CIGS thin films, Evaporation method, Evaporation technique, Glass substrate, Intensity ratio, Multi-stage, Peak intensity, Preferential growth, Preferential orientation, co-evaporation