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학술지 Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
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저자
정순원, 최정선, 구재본, 박찬우, 나복순, 오지영, 임상철, 이상석, 추혜용, 윤성민
발행일
201501
출처
Organic Electronics, v.16, pp.46-53
ISSN
1566-1199
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.orgel.2014.08.051
협약과제
14MB1400, 미래광고 서비스를 위한 에너지절감형 환경적응 I/O (Input/Output) 플랫폼 기술 개발, 황치선
초록
The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5 × 10-2 cm2 V-1 s-1, 7.5 × 103, and 2.5 V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6 cm. The memory on/off ratio was initially obtained to be 1.5 × 103 and maintained to be 20 even after a lapse of 2000 s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices.
키워드
Flexible, Nonvolatile memory transistor, Organic ferroelectric, Poly(vinylidene-trifluoroethylene), Polydimethylsiloxane
KSP 제안 키워드
Active channel, Carrier mobility, Device characteristics, First Stokes(S1), Gate insulator, Non-Volatile Memory(NVM), Nonvolatile memory devices, PDMS elastomer, Radius of curvature, Thin-Film Transistor(TFT), ferroelectric memory