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학술지 Critical Role of Top Interface Layer on the Bipolar Resistive Switching of Al/PEDOT:PSS/Al Memory Device
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저자
김종윤, 정후영, 김정원, 윤태현, 최성율
발행일
201103
출처
Current Applied Physics, v.11 no.2 SUPPL., pp.e35-e39
ISSN
1567-1739
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.cap.2010.12.038
협약과제
10MB6600, 플렉서블 PoRAM 소재 원천기술 개발, 최성율
초록
The role of top interface layer in bipolar resistive switching (BRS) behaviors of Al/PEDOT:PSS/Al memory devices was investigated via comparison with the Au/PEDOT:PSS/Al system. The I-V characteristic curves of device with a PEDOT:PSS layer sandwiched between two Al electrodes displayed bipolar resistive switching characteristics, while the device with Au top electrode showed a permanent breakdown in forming process. HRTEM and in-situ XPS observation demonstrated that the Al top electrode reacted with oxygen and sulfur of PSS chain and produced Al-O-S layers, whereas Au top electrode did not reacted to form these types of interfacial layers. These results have confirmed the critical role of Al top electrode with the strong reactivity with a PEDOT:PSS organic layer in the bipolar resistive switching behaviors, which seems to closely related with the presence of electron trap sites at the interface between the top electrode and organic active layer. © 2011 Elsevier B.V. All rights reserved.
키워드
In-situ XPS, Memory device, PEDOT:PSS, Resistive switching, TEM
KSP 제안 키워드
Active Layer, Al electrodes, Bipolar resistive switching, Electron traps, Forming processes, I-V characteristic(Transport property), I-V characteristic curves, Initialization Vector(IV), Organic layers, PEDOT:PSS layer, Trap sites