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학술지 Dielectric characteristics of Co doped ZnO thin films at terahertz frequencies
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저자
김기출, 강승범, 곽민환, 강광용, 김용성
발행일
201110
출처
Ferroelectrics, v.422 no.1, pp.9-13
ISSN
0015-0193
출판사
Gordon and Breach
DOI
https://dx.doi.org/10.1080/00150193.2011.594767
협약과제
10MB1400, THz파 발진 변환 검출기 및 신호원, 강광용
초록
We report the complex dielectric characteristics of the Co doped ZnO thin films by terahertz time-domain spectroscopy. The Co doped ZnO thin films are prepared by solgel spin coating process on glass substrate. The crystal structure and morphology of the Zn1-xCoxO films are characterized by high resolution X-ray diffraction and scanning electronmicroscopy, respectively. The Zn1-xCoxOthin film with 10 at.% Co concentration exhibits highly c-axis orientation and the lowest electrical resistivity. The measured THz pulse and the complex dielectric constant of Zn0.8Co0.2O film exhibit different behavior to others due to the decrease of the crystallinity of the film. Copyright © Taylor & Francis Group, LLC.
키워드
Co Doped ZnO film, Complex dielectric constant, Terahertz time-domain spectroscopy
KSP 제안 키워드
CO concentration, Co-doped, Coating process, Complex Dielectric Constant, Crystal structure and morphology, Dielectric characteristics, Doped ZnO, Glass substrate, High-resolution X-ray diffraction, Spin coating, Terahertz frequency