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학술지 Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array
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저자
김병훈, 변춘원, 윤성민, 양신혁, 정순원, 유민기, 박상희, 황치선, 조경익, 권오상, 박은숙, 오힘찬, 김경환, 박기찬
발행일
201103
출처
IEEE Electron Device Letters, v.32 no.3, pp.324-326
ISSN
0741-3106
출판사
IEEE
DOI
https://dx.doi.org/10.1109/LED.2010.2096197
협약과제
11MB2300, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
A new ferroelectric memory array on a glass substrate has been developed using InGaZnO (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200 °C . The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the 1 and 0 states is about 10-4. © 2006 IEEE.
키워드
Disturb-free, ferroelectric memory, InGaZnO (IGZO), thin-film transistor (TFT)
KSP 제안 키워드
Current ratio, Disturb-free, Glass substrate, IGZO TFTs, Memory Array, Thin-Film Transistor(TFT), VDF-TrFE, dielectric layer, fabrication process, ferroelectric memory, gate dielectric