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학술지 Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits
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저자
백강준, 김동윤, 정순원, 강민지, 유인규, 김동유, Antonio Facchetti, 노용영
발행일
201210
출처
Advanced Materials, v.24 no.40, pp.5433-5439
ISSN
0935-9648
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/adma.201201464
협약과제
12IC1100, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm2 V-1 s-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
키워드
ambipolarity, charge transport, conjugated polymers, dielectric, organic complementary circuit, organic field-effect transistors, P(VDF-TrFE)
KSP 제안 키워드
Channel properties, Charge transport, Co. KGaA, Conjugated polymer(PFO-co-MEH-PPV), Field-effect transistors(FETs), First Stokes(S1), High performance, High-k Dielectric, Hole mobility, Hole transport, N-channel