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학술지 Antimony Selenide Phase-Change Nanowires for Memory Application
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저자
정순원, 윤성민, 유인규, 유병곤, 구경완
발행일
201102
출처
Journal of Nanoscience and Nanotechnology, v.11 no.2, pp.1569-1572
ISSN
1533-4880
출판사
American Scientific Publishers (ASP)
DOI
https://dx.doi.org/10.1166/jnn.2011.3385
협약과제
09IC1900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
Synthesis and device characteristics of highly scalable antimony selenide nanowire-based phase transition memory are reported. Antimony selenide nanowires prepared using the metal-catalystfree approach are single-crystalline and of high-purity. The nanowire memory can be repeatedly switched between high-resistance (~10 M廓) and low-resistance (~1 k廓) states which are attributed to amorphous and crystalline states, respectively. Copyright © 2011 American Scientific Publishers All rights reserved.
키워드
Antimony selenide, Nanowire, Nonvolatile memory, Phase-change memory
KSP 제안 키워드
Antimony selenide, Device characteristics, High-purity, Memory applications, Non-Volatile Memory(NVM), Phase Change Material(PCM), Phase transition, Single-crystalline