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학술지 Ultra-thin Gate Dielectrics for Top Gate Polymer Field-effect Transistors
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저자
노용영, Henning Sirringhaus
발행일
200902
출처
Organic Electronics, v.10 no.1, pp.174-180
ISSN
1566-1199
출판사
Elsevier
DOI
https://dx.doi.org/10.1016/j.orgel.2008.10.021
협약과제
08MC4100, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30-50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hexane. The top-gate polymer transistors with thin gate dielectrics were operated at gate voltages less than -8 V with a relatively high dielectric breakdown strength (>3 MV/cm) and a low leakage current (10-100 nA/mm2 at 2 MV/cm). The yield of thin gate dielectrics in top-gate polymer FETs is correlated with the roughness of underlying semiconducting polymer film. High mobilities of 0.1-0.2 cm2/V s and on and off state current ratios of 104 were achieved with the high performance semiconducting polymer, poly(2,5-bis(3-alkylthiophen-2yl)thieno[3,2-b]thiophene. © 2008 Elsevier B.V. All rights reserved.
키워드
Organic field-effect transistor, Polymer gate dielectrics
KSP 제안 키워드
Crosslinkable polymer, Dielectric breakdown strength, Field-effect transistors(FETs), High dielectric, High performance, Off-State, Organic field-effect, Polymer films, Room-temperature, Ultra-thin, crosslinking agent