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학술지 Passivation of Bottom-Gate IGZO Thin Film Transistors
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저자
조두희, 양신혁, 신재헌, 변춘원, 유민기, 이정익, 황치선, 추혜용
발행일
200901
출처
Journal of the Korean Physical Society, v.54 no.1, pp.531-534
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.54.531
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We have studied transparent bottom-gate TFTs (thin film transistors) using amorphous IGZO (In-Ga-Zn-O) as an active channel material. The TFT devices had inverse co-planar structures. Source/drain and gate electrodes were constituted by ITO sputtered with a DC-RF magnetron sputter system, and an alkaline-free glass was used as a substrate. The gate insulator was Al2O 3 formed by using an atomic layer deposition (ALD) method at 150 °C. An active layer was formed by off-axis RF magnetron sputtering and post-annealing was performed with a hot plate or a vacuum oven. The field effect mobilities and the sub-threshold swings of the IGZO TFTs were 12 ~18 cm2/Vs and 0.2 ~ 0.6 V/dec, respectively. However, the hysteresis on I-V characteristics was relatively large without passivation. Thus, we passivated the TFT devices with inorganic and organic materials. After the organic passivation and post-heat treatments, the hysteresis was remarkably reduced without deterioration of the electrical characteristics.
키워드
Oxide, Passivation, TFT, Transparent
KSP 제안 키워드
AND gate, Active Layer, Active channel, Atomic Layer Deposition, Bottom gate, Channel material, Co-Planar, Gate insulator, I-V characteristic(Transport property), IGZO TFTs, IGZO thin film