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학술지 High Speeds Complementary Integrated Circuits Fabricated with All-Printed Polymeric Semiconductors
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저자
백강준, 김동윤, 김동유, 정순원, 구재본, 유인규, Henry Yan, Antonio Facchetti, 노용영
발행일
201101
출처
Journal of Polymer Science Part B : Polymer Physics, v.49 no.1, pp.62-67
ISSN
0887-6266
출판사
John Wiley & Sons
DOI
https://dx.doi.org/10.1002/polb.22148
협약과제
10MC2900, 개별물품 단위 응용을 위한 차세대 RFID 기술 개발, 채종석
초록
Inkjet-printed high speed polymeric complementary circuits are fabricated using an n-type ([poly{[N,N??-bis(2-octyldodecyl)-naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5??-(2,2??-dithiophene)} [P(NDI2OD-T2), Polyera ActivInk N2200] and two p-type polymers [poly(3-hexylthiophene) (P3HT) and a dithiophene-based polymer (Polyera ActivInk P2100)]. The top-gate/bottom-contact (TG/BC) organic field-effect transistors (OFETs) exhibit well-balanced and very-high hole and electron mobilities (μFET) of 0.2-0.5 cm2/Vs, which were enabled by optimization of the inkjet-printed active features, small contact resistance both of electron and hole injections, and effective control over gate dielectrics and its orthogonal solvent effect (selection of poly(methyl methacrylate) and 2-ethoxyethanol). Our first demonstrated inkjet-printed polymeric complementary devices have been integrated to high-performance complementary inverters (gain >30) and ring oscillators (oscillation frequency ~50 kHz). We believe that the operating frequency of printable organic circuits can be further improved more than 10 MHz by fine-tuning of the device architecture and optimization of the p- and n-channel semiconductor processing. © 2010 Wiley Periodicals, Inc.
키워드
flexible electronics, inkjet printing, organic electronics, organic field-effect transistors
KSP 제안 키워드
2-ethoxyethanol, 3-hexylthiophene(SEM poly), All-printed, Bottom contact, Complementary inverter, Contact resistance(73.40.Cg), Field-effect transistors(FETs), Flexible electronics, High Speed, High performance, Integrated circuit