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학술지 Bipolar Resistive Switching in Amorphous Titanium Oxide Thin Film
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저자
정후영, 이정용, 유민기, 최성율
발행일
201001
출처
Physica Status Solidi (RRL), v.4 no.1-2, pp.1-3
ISSN
1862-6254
출판사
WILEY-VCH Verlag GmbH & Co. KGaA
DOI
https://dx.doi.org/10.1002/pssr.200903383
협약과제
08IB2300, 고신뢰성 charge complex 소재 탐색, 최성율
초록
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for thecarrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO2 Fermi energy level (Ef) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KSP 제안 키워드
Activation Energy, Aluminum electrodes, Amorphous titanium oxide, Bipolar resistive switching, Co. KGaA, Current regime, Electrical measurements, Fermi energy level, High temperature region, Oxygen ions, Plasma-enhanced atomic layer deposition