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학술지 Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
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저자
윤성민, 양신혁, 변춘원, 정순원, 유민기, 박상희, 김병훈, 오힘찬, 황치선, 유병곤
발행일
201103
출처
Semiconductor Science and Technology, v.26 no.3, pp.1-25
ISSN
0268-1242
출판사
Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1088/0268-1242/26/3/034007
협약과제
10MB3700, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
초록
Organic-inorganic hybrid-type nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting active channel are a very promising solution to the memory devices having both features of low-cost and high-performance, which are embeddable into the next-generation flexible and transparent electronics. In this paper, we discuss some important issues for this proposed device, such as device structure design, process optimization and memory array integration. Promising feasible applications and remaining technology issues to solve were also discussed. © 2011 IOP Publishing Ltd.
KSP 제안 키워드
Active channel, Device structure, Ferroelectric gate, Gate insulator, High performance, Hybrid type, Low-cost, Memory Array, Next-generation, Non-Volatile Memory(NVM), Organic-inorganic hybrid