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학술대회 Transparent Triple-layer Oxide TFT for Enhanced Photo Switching Characteristics
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저자
이종찬, 문제현, 피재은, 조성행, 김희옥, 오힘찬, 황치선, 안성덕, 강승열, 권광호
발행일
201807
출처
International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2018, pp.1-3
DOI
https://dx.doi.org/10.23919/AM-FPD.2018.8437364
협약과제
18HB1100, 차세대 신기능 스마트디바이스 플랫폼을 위한 대면적 이차원소재 및 소자 원천기술 개발, 윤선진
초록
We studied transparent thin film transistors with a triple-layer channel structure of aluminium-doped indium zinc tin oxide (Al-IZTO) / indium zinc oxide (IZO) / Al-IZTO to suppress the persistent photoconductivity (PPC). The TFT was fabricated top-gate, bottom-contact structure. The characteristics of Al-IZTO triple-layer exhibited high mobility (μ sat) of3 2 cm2/Vs, Vth of -4V, and sub-threshold swing of 260 mV/dec. We applied a positive gate pulse to Al-IZTO triple-layer TFT and the PPC was shrunk in a short time span of 55 ms with 10 μs gate pulse. Our TFT scheme can be readily applied as photo TFTs where stable operation and electrical manipulations of PPC are desired.
KSP 제안 키워드
Bottom contact, Channel structure, Contact structure, Gate pulse, High Mobility, Indium zinc oxide, Indium zinc tin oxide(IZTO), Oxide TFTs, Persistent photoconductivity (ppc), Short time, Stable operation