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학술지 A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
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저자
민병규, 장성재, 정현욱, 윤형섭, 이종민, 장우진, 강동민
발행일
202007
출처
한국물리학회, v.77 no.2, pp.122-126
ISSN
0374-4884
출판사
한국물리학회
DOI
https://dx.doi.org/10.3938/jkps.77.122
협약과제
19HB2900, 미세공정 화합물 반도체 기반 밀리미터파 대역 5G 부품기술 개발, 강동민
초록
In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether the drain current through the channel layer has reached the target current. Non-uniformity of the etching rate occurs during wet etching with citric acid. In this study, the cause of that non-uniformity was investigated. We confirmed that an electrochemical potential caused by the electrolyte of the etching solution was induced between the ohmic electrode and the epitaxial layer of the recess region, resulting in a non-uniform etching rate. In particular, the case where the Au of an ohmic electrode is exposed by the monitor window for the measuring channel current was considered. The gate recess etch rate was changed by the presence, location and size of the photoresist openings on the ohmic electrodes.
키워드
Gate, InAlAs/InGaAs, mHEMT, Recess
KSP 제안 키워드
Channel current, Channel layer, Citric acid, Drain current, Electrochemical potential, Epitaxial layer, Etch rates, Etching solution, Gate recess, High electron mobility transistor(HEMT), InAlAs/InGaAs mHEMT