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학술지 Postfabrication Annealing Effects on Insulator-Metal Transitions in VO2 Thin-Film Devices
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저자
Servin Rathi, In-yeal Lee, 박진형, 김봉준, 김현탁, 김길호
발행일
201411
출처
ACS Applied Materials & Interfaces, v.6 no.22, pp.19718-19725
ISSN
1944-8244
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/am5046982
협약과제
14ZE1100, ETRI 창의연구실 사업, 손승원
초록
(Figure Presented) In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.
키워드
Annealing, Metal-insulator transition, Transmission line method, Vanadium dioxide thin-films
KSP 제안 키워드
Annealing effects, Hysteresis measurements, Reducing atmosphere, Thermal characteristic, Transition Point, Transmission line method(TLM), Vanadium dioxide thin film, X-ray photoelectron spectroscopy (xps), device fabrication, insulator-metal transition, metal-insulator transition