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학술지 Voltage Switching of a VO2 Memory Metasurface Using Ionic Gel
Cited 53 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
M. D. Goldflam, M. K. Liu, B. C. Chapler, H. T. Stinson, A. J. Sternbach, A. S. McLeod, J. D. Zhang, K. Geng, M. Royal, 김봉준, R. D. Averitt, N. M. Jokerst, D. R. Smith, 김현탁, D. N. Basov
발행일
201411
출처
Applied Physics Letters, v.105 no.4, pp.1-4
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.4891765
협약과제
14ZE1100, ETRI 창의연구실 사업, 손승원
초록
We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO2 layer. Positive and negative voltage application can selectively tune the metasurface resonance into the "off" or "on" state by pushing the VO2 into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO2 based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte-VO2 interface. © 2014 AIP Publishing LLC.
KSP 제안 키워드
Control device, Electrochemical effects, Insulating regime, Ionic gel, Negative voltage, Positive and negative, Saturation time, Spatial scales, Voltage application, insulator-to-metal transition, low voltage