Subjects : ferroelectric field effect
Type | Year | Title | Cited | Download |
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Journal | 2010 | Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778 | 3 | 원문 |
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