Subjects : Rectification factor
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2018 | Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2 무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 | 24 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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