Subjects : Access Region
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2021 | Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors Sungjae Chang Crystals, v.11, no.11, pp.1-10 | 9 | 원문 |
| Conference | 2017 | Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 | 4 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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