Subjects : Trap effect
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2012 | Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 | 1 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
|---|---|---|---|---|---|
| No search results. | |||||
| Type | Year | Research Project | Primary Investigator | Download |
|---|---|---|---|---|
| No search results. | ||||