Subjects : Low-resistance state
Type | Year | Title | Cited | Download |
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Journal | 2007 | Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films Yoon Sung Min Applied Surface Science, v.254, no.1, pp.316-320 | 50 | 원문 |
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