Subjects : MOS devices
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2017 | A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor Doohyung Cho Journal of the Korean Physical Society, v.71, no.3, pp.150-155 | 5 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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