Subjects : Scaling effect
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2012 | Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 | 1 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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