Subjects : Critical gate
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2006 | Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress Bongki Mheen Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947 | 0 | 원문 |
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| Type | Year | Research Project | Primary Investigator | Download |
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