학술지
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2021 |
MemBox: Shared Memory Device for Memory-Centric Computing Applicable to Deep Learning Problems
최용석 Electronics, v.10 no.21, pp.1-18 |
0 |
원문
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학술지
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2021 |
Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors
임정욱 Advanced Electronic Materials, v.7 no.4, pp.1-7 |
7 |
원문
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학술지
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2020 |
Multi-Level Long-Term Memory Resembling Human Memory Based on Photosensitive Field-Effect Transistors with Stable Interfacial Deep Traps
김태윤 Advanced Electronic Materials, v.66 no.4, pp.1-7 |
8 |
원문
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학술지
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2020 |
Flexible NiO Nanocrystal-based Resistive Memory Device Fabricated by Low-temperature Solution-process
윤혜원 Current Applied Physics, v.20 no.2, pp.288-292 |
17 |
원문
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학술대회
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2018 |
Nonvolatile Memory Devices of ReS2 Nanosheets- Polyvinylalcohol Composites
양준재 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1 |
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학술지
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2018 |
Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface
김태윤 ACS Applied Materials & Interfaces, v.10 no.31, pp.26405-26412 |
12 |
원문
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학술지
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2018 |
Solution-Processed Flexible NiO Resistive Random Access Memory Device
김수정 Solid-State Electronics, v.142, pp.56-61 |
8 |
원문
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학술지
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2018 |
High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer
임재갑 Solid-State Electronics, v.140, pp.134-138 |
11 |
원문
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학술지
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2018 |
Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications
연창봉 Small, v.14 no.2, pp.1-10 |
19 |
원문
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학술대회
|
2017 |
A Backup/Recovery Method for Fault Tolerant Memory-based Storage in Integrated Storage System
차재근 International Conference on Information Technology (ICIT) 2017, pp.351-354 |
0 |
원문
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학술지
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2016 |
InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate
나복순 Journal of Nanoscience and Nanotechnology, v.16 no.10, pp.10280-10283 |
5 |
원문
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학술지
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2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power Consumption
김경아 IEEE Transactions on Electron Devices, v.63 no.1, pp.394-401 |
5 |
원문
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학술지
|
2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power Consumption
변춘원 IEEE Transactions on Electron Devices, v.63 no.1, pp.394-401 |
5 |
원문
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학술지
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2015 |
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
정순원 Journal of Vacuum Science and Technology B, v.33 no.5, pp.1-4 |
17 |
원문
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학술지
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2015 |
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
정순원 Organic Electronics, v.16, pp.46-53 |
43 |
원문
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학술지
|
2014 |
Automated and Coupled Services of Advanced Smart Surveillance Systems Toward Green IT: Tracking, Retrieval and Digital Evidence
박수완 Journal of Supercomputing, v.69 no.3, pp.1215-1234 |
1 |
원문
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학술지
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2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
박래만 Electronic Materials Letters, v.9 no.4, pp.467-469 |
6 |
원문
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학술지
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2013 |
Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
최민섭 Nature Communications, v.4, pp.1-7 |
546 |
원문
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학술대회
|
2012 |
Transparent Nonvolatile Memory Device using Silicon Quantum Dots
박래만 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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학술지
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2012 |
High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory
백강준 Advanced Functional Materials, v.22 no.14, pp.2915-2926 |
196 |
원문
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학술지
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2012 |
Nitrogen Doping Effect in Ag-SbTe Solid Electrolyte for Programmable Metallization Cell Memory
박영삼 Electronics Letters, v.48 no.8, pp.458-460 |
2 |
원문
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학술지
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2012 |
Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method
양용석 Journal of the Korean Physical Society, v.60 no.10, pp.1504-1507 |
5 |
원문
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학술지
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519 no.18, pp.6174-6177 |
0 |
원문
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학술지
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2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
윤성민 IEEE Transactions on Electron Devices, v.58 no.7, pp.2135-2142 |
20 |
원문
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학술지
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2011 |
Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application
이승윤 Japanese Journal of Applied Physics, v.50 no.6 PART 2, pp.1-5 |
0 |
원문
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학술지
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2011 |
Bending Characteristics of Ferroelectric Poly(Vinylidene Fluoride Trifluoroethylene) Capacitors Fabricated on Flexible Polyethylene Naphthalate Substrate
윤성민 Current Applied Physics, v.11 no.3 SUPPL., pp.S219-S224 |
15 |
원문
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학술지
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2011 |
Impact of Amorphous Titanium Oxide Film on the Device Stability of Al/TiO2/Al Resistive Memory
정후영 Applied Physics A : Materials Science & Processing, v.102 no.4, pp.967-972 |
28 |
원문
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학술지
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2011 |
Critical Role of Top Interface Layer on the Bipolar Resistive Switching of Al/PEDOT:PSS/Al Memory Device
김종윤 Current Applied Physics, v.11 no.2 SUPPL., pp.e35-e39 |
7 |
원문
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학술지
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2011 |
Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
윤성민 Semiconductor Science and Technology, v.26 no.3, pp.1-25 |
40 |
원문
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학술지
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2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
김종윤 Nano Letters, v.10 no.11, pp.4381-4386 |
529 |
원문
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학술지
|
2010 |
Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
정후영 Advanced Functional Materials, v.20 no.22, pp.3912-3917 |
165 |
원문
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학술지
|
2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
정후영 Nano Letters, v.10 no.11, pp.4381-4386 |
529 |
원문
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학술지
|
2010 |
Flexible Resistive Switching Memory Device Based on Graphene Oxide
홍설기 IEEE Electron Device Letters, v.31 no.9, pp.1005-1007 |
164 |
원문
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학술지
|
2010 |
Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices
이정규 IEEE Electron Device Letters, v.31 no.6, pp.603-605 |
39 |
원문
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학술지
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2010 |
Phase-Change Memory Device Fabricated Using Solid-State Alloying
이승윤 Electronics Letters, v.46 no.9, pp.652-654 |
5 |
원문
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학술지
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2010 |
A Low-Temperature-Grown TiO2-Based Device for the Flexible Stacked RRAM Application
정후영 Nanotechnology, v.21 no.11, pp.1-6 |
126 |
원문
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학술지
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2010 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
윤성민 Electrochemical and Solid-State Letters, v.13 no.5, pp.H141-H143 |
17 |
원문
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학술지
|
2009 |
Transparent Flexible Resistive Random Access Memory Fabricated at Room Temperature
서중원 Applied Physics Letters, v.95 no.13, pp.1-4 |
119 |
원문
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학술지
|
2009 |
Memory Metamaterials
T.Driscoll Science, v.325 no.5947, pp.1518-1521 |
777 |
원문
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학술지
|
2009 |
Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
윤성민 Japanese Journal of Applied Physics, v.48 no.9, pp.1-4 |
3 |
원문
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학술대회
|
2009 |
CMOS Compatible Phase-Change Memory Device for Low Power Consumption
박영삼 International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) 2009, pp.1-2 |
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학술지
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2009 |
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
백강준 Solid-State Electronics, v.53 no.11, pp.1165-1168 |
22 |
원문
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학술지
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2009 |
Improvement of Operational Stability in SET States of Phase-Change-Type Nonvolatile Memory Devices using Sb-Rich Phase of Ge-Sb-Te Alloys
윤성민 Solid-State Electronics, v.53 no.5, pp.557-561 |
6 |
원문
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학술지
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2009 |
Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge-Sb-Te Films
윤성민 Japanese Journal of Applied Physics, v.48 no.4, pp.1-6 |
1 |
원문
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학술대회
|
2008 |
How to Improve Molecular Memory Device yield using SAMs
이효영 International Conference on Nano-Molecular Electronics (ICNME) 2008, pp.1-1 |
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학술지
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2008 |
Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures
윤성민 Microelectronic Engineering, v.85 no.12, pp.2334-2337 |
11 |
원문
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학술지
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2008 |
Process Compatible Silicon-germanium-antimony Heating Layer for High Density Phase-change Memory Applications
이승윤 Microelectronic Engineering, v.85 no.12, pp.2342-2345 |
5 |
원문
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학술대회
|
2008 |
Molecular Conductance Switching of Single Ruthenium Complex Molecules and Nanostructured Memory Device
이효영 Molecualr Electronics 2008, pp.1-1 |
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학술대회
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2008 |
Nonvolatile Resistive Switching Memory Devices using Organic- Inorganic Hybrid Superlattices with Monolayer Precision
최성율 Molecular Electronics 2008, pp.1-1 |
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학술대회
|
2008 |
Top Electrode Dependence on Resistance Switching Properties of Metal/TiOx/Al Memory Devices
정후영 International Conference on Nano Science and Nano Technology (GJ-NST) 2008, pp.1-1 |
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학술지
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2008 |
Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers
윤성민 Journal of the Electrochemical Society, v.155 no.6, pp.H421-H425 |
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학술대회
|
2008 |
Fabrication of Molecular Memory Devices Using Bulky Ruthenium Complexes
장호종 International Conference on Molecular Electronics and Devices (IC ME&D) 2008, pp.1-2 |
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학술지
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2008 |
Bilayer Heater Electrode for Improving Reliability of Phase-Change Memory Devices
이승윤 Journal of the Electrochemical Society, v.115 no.5, pp.H314-H318 |
7 |
원문
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학술대회
|
2008 |
Molecular Memory Devices using Ruthenium-terpyridine, MLCT, Complexes
이효영 MRS Meeting 2008 (Spring), pp.1-1 |
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학술대회
|
2008 |
Phase-Change Memory Devices Employing SiGe Heating Layers
이승윤 한국 반도체 학술 대회 (KCS) 2008, pp.33-34 |
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학술지
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2007 |
Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge-Sb-Te Alloy Films
윤성민 Japanese Journal of Applied Physics, v.46 no.11, pp.7225-7231 |
17 |
원문
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학술지
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2007 |
Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films
윤성민 Applied Surface Science, v.254 no.1, pp.316-320 |
47 |
원문
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학술지
|
2007 |
Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories
이승윤 Applied Surface Science, v.254 no.1, pp.312-315 |
3 |
원문
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학술지
|
2007 |
Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories
윤성민 Integrated Ferroelectrics, v.93 no.1, pp.83-89 |
2 |
원문
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학술지
|
2007 |
Effects of Barrier Layers on the Electrical Behaviors of Phase-Change Memory Devices Using Sb-rich Ge-Sb-Te Films
윤성민 Integrated Ferroelectrics, v.93 no.1, pp.75-82 |
4 |
원문
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학술지
|
2007 |
Low Power and High Speed Phase-change Memory Devices with Silicon-germanium Heating Layers
이승윤 Journal of Vacuum Science and Technology B, v.25 no.4, pp.1244-1248 |
16 |
원문
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학술지
|
2007 |
Rose Bengal Dye on Thiol-Terminated Bilayer for Molecular Devices
방경숙 Langmuir, v.23 no.9, pp.5195-5199 |
11 |
원문
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학술지
|
2007 |
Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5
윤성민 Japanese Journal of Applied Physics, v.46 no.4, pp.L99-L102 |
18 |
원문
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학술대회
|
2006 |
Molecular Memory Device Patterened by Organic Conducting Electrode
이효영 MRS Meeting 2006 (Fall), pp.1-1 |
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학술대회
|
2006 |
An Application of Molecular Memory Devices: A Thiol-Substitued Ru-Terpyridine Self-Assembles on Gold Surface
이효영 MRS Meeting 2006 (Fall), pp.1-3 |
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학술대회
|
2006 |
A Thiol-Substitued Ru[II]-Terpyridine Complexes: Syntheses, Immobilization, and Application for Molecular Memory Devices
이정현 Asian Conference on Nanoscience and Nanotechnology (AsiaNANO) 2006, pp.1-2 |
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학술대회
|
2006 |
Development of Molecular Logic Array and Memory Device
이효영 Nanotechnology Materials and Devices Conference (NMDC) 2006, pp.1-3 |
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학술대회
|
2006 |
Molecular Logic and Memory Device
이효영 International Conference Korean Soceity for Bioinformatics (KSBI) 2006, pp.1-2 |
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학술지
|
2006 |
Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations
윤성민 IEEE Electron Device Letters, v.27 no.6, pp.445-447 |
109 |
원문
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학술대회
|
2006 |
Phase Change Memory Device with U-shaped Heater (PCM-U)
박영삼 European Phase Change and Ovonic Symposium (EPCOS) 2006, pp.1-4 |
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학술지
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2006 |
Writing Current Reduction in Phase Change Memory Device with U-Shaped Heater (PCM-U)
박영삼 Japanese Journal of Applied Physics, v.45 no.20, pp.516-518 |
16 |
원문
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학술지
|
2005 |
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
윤성민 Japanese Journal of Applied Physics, v.44 no.24-27, pp.L869-L872 |
35 |
원문
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학술대회
|
2004 |
Matching output queueing with a multiple input/output-queued switch
이형일 INFOCOM 2004, pp.1135-1146 |
4 |
원문
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