학술대회
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2023 |
Threshold Voltage Shift Mechanisms Induced by γ-ray and Proton Irradiation in GaN-based MIS-HEMTS for Satellite Communication System
Sungjae Chang 한국통신학회 종합 학술 발표회 (하계) 2023, pp.1-3 |
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학술지
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sungjae Chang Nanomaterials, v.13 no.5, pp.1-13 |
0 |
원문
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학술지
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2022 |
Highly Efficient Hybrid Light-Emitting Transistors incorporating MoOx/Ag/MoOx Semi-Transparent Electrodes
박유정 Journal of Materials Chemistry C, v.10 no.3, pp.880-885 |
3 |
원문
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학술지
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2020 |
Design and Characterization of N-MCT with Low Vth Off-FET for High Current-drive Capability
Sungkyu Kwon Journal of Semiconductor Technology and Science, v.20 no.6, pp.533-542 |
1 |
원문
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학술지
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2020 |
Few-layer PdSe2-based Field-effect Transistor for Photodetector Applications
A.Venkatesan Materials Science in Semiconductor Processing, v.115, pp.1-7 |
8 |
원문
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학술지
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2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9 no.17, pp.1-13 |
5 |
원문
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학술지
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2019 |
Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors
Xinlin Li Organic Electronics, v.69, pp.190-199 |
32 |
원문
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학술지
|
2019 |
Cone-jet Printing of Aligned Silver Nanowire/poly(ethylene oxide) Composite Electrodes for Organic Thin-film Transistors
김경훈 Organic Electronics, v.69, pp.190-199 |
32 |
원문
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학술지
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2019 |
DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess
Hyung Sup Yoon 한국전자파학회논문지, v.30 no.4, pp.282-285 |
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원문
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학술지
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74 no.2, pp.196-200 |
4 |
원문
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학술대회
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2018 |
DC/RF Characteristics of 100nm mHEMT Device Fabricated with Two-step Gate Recessing
Hyung Sup Yoon 한국전자파학회 학술 대회 (추계) 2018, pp.106-106 |
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학술지
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2018 |
Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates
이창희 Nanotechnology, v.29 no.33, pp.1-8 |
70 |
원문
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학술지
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2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
칸무하메드 ACS Applied Materials & Interfaces, v.10 no.28, pp.23961-23967 |
17 |
원문
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학술지
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2018 |
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm2/V·s for High-Speed Operation
Yang Jong-Heon IEEE Electron Device Letters, v.39 no.4, pp.508-511 |
33 |
원문
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학술지
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2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7 no.4, pp.197-200 |
2 |
원문
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학술지
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2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
손동혁 Solid-State Electronics, v.141, pp.7-12 |
8 |
원문
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학술지
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2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
조영우 Solid-State Electronics, v.141, pp.7-12 |
8 |
원문
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학술지
|
2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
8 |
원문
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학술지
|
2017 |
80 μW/MHz, 850 MHz Fault Tolerant Processor with Fault Monitor Systems
Han Jin Ho Journal of Semiconductor Technology and Science, v.17 no.5, pp.627-635 |
1 |
원문
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학술지
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71 no.6, pp.365-369 |
5 |
원문
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학술지
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71 no.6, pp.360-364 |
2 |
원문
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학술지
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2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Current Applied Physics, v.17 no.2, pp.157-161 |
12 |
원문
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학술지
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2017 |
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
강민식 Nanoscale, v.9 no.4, pp.1645-1652 |
39 |
원문
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학술지
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2016 |
High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications
Kim Sang Gi Transactions on Electrical and Electronic Materials, v.17 no.5, pp.301-304 |
0 |
원문
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학술지
|
2016 |
Effects of Boundary and Bulk Control Technology in Cholesteric Liquid Crystals
Gi Heon Kim Molecular Crystals and Liquid Crystals, v.633 no.1, pp.72-79 |
4 |
원문
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학술지
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2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
Hokyun Ahn ETRI Journal, v.38 no.4, pp.675-684 |
4 |
원문
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학술대회
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2016 |
Characterization of 0.18 μm Gate-Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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학술대회
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2016 |
Characteristics of Enhanced-mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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학술대회
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2016 |
Threshold Voltage Shift of 0.2 μm AlGaN/GaN MISHFET with Fluorinated Gate Dielectric
Hokyun Ahn International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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학술지
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2016 |
Non-volatile Organic Ferroelectric Memory Transistors Fabricated using Rigid Polyimide Islands on an Elastomer Substrate
Soon-Won Jung Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4 no.20, pp.4485-4490 |
23 |
원문
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학술지
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2016 |
Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.16 no.3, pp.2752-2755 |
13 |
원문
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학술지
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2015 |
High-Performance Amorphous Multilayered ZnO-SnO2 Heterostructure Thin-Film Transistors: Fabrication and Characteristics
Su Jae Lee ETRI Journal, v.37 no.6, pp.1135-1142 |
25 |
원문
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학술지
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2015 |
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Cho Sung Haeng IEEE Transactions on Electron Devices, v.62 no.11, pp.3653-3657 |
30 |
원문
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학술지
|
2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67 no.4, pp.654-657 |
4 |
원문
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학술지
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112 no.5, pp.1170-1173 |
7 |
원문
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학술지
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2014 |
Characterization of Amorphous Multilayered ZnO-SnO2 Heterostructure Thin Films and their Field Effect Electronic Properties
Su Jae Lee Applied Physics Letters, v.105 no.20, pp.1-4 |
12 |
원문
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학술지
|
2014 |
Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Cho Sung Haeng Physica Status Solidi (A), v.211 no.9, pp.2126-2133 |
18 |
원문
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학술지
|
2014 |
Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
Jongmin Lee Journal of the Korean Physical Society, v.64 no.10, pp.1446-1450 |
2 |
원문
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학술지
|
2014 |
Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
Hokyun Ahn Solid-State Electronics, v.95, pp.42-45 |
15 |
원문
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학술지
|
2013 |
Unusual Instability Mode of Transparent All Oxide Thin Film Transistor under Dynamic Bias Condition
Oh Himchan Applied Physics Letters, v.103 no.12, pp.1-5 |
3 |
원문
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학술지
|
2013 |
Low-Voltage, High Speed Inkjet-Printed Flexible Complementary Polymer Electronic Circuits
백강준 Organic Electronics, v.14 no.5, pp.1407-1418 |
62 |
원문
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학술지
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2013 |
Light-Exposure Effects on Electrical Characteristics of 6,13-Bis(triisopropylsilylethynyl)Pentacene/CdTe Composite Thin-Film Transistors
박재훈 Japanese Journal of Applied Physics, v.52 no.5 PART 2, pp.1-4 |
3 |
원문
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학술지
|
2012 |
Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits
Kang-Jun Baeg ACS Applied Materials & Interfaces, v.4 no.11, pp.6176-6184 |
76 |
원문
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학술지
|
2012 |
Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In-Ga-Zn-O Thin-Film Transistors
박준용 ACS Applied Materials & Interfaces, v.4 no.10, pp.5369-5374 |
25 |
원문
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학술지
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2012 |
An Experimental Study of the Effects of Source/Drain to Gate Overlap in Pentacene Thin-Film Transistors
Park Jae Hoon Japanese Journal of Applied Physics, v.51 no.9 PART3, pp.1-4 |
4 |
원문
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학술지
|
2012 |
A Low-Power Scan Driver Circuit for Oxide TFTs
Jae-Eun Pi IEEE Electron Device Letters, v.33 no.8, pp.1144-1146 |
23 |
원문
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학술지
|
2012 |
Size and Surface Modification Effects on the pH Response of Si Nanowire Field-Effect Transistors
백인복 Journal of Nanoscience and Nanotechnology, v.12 no.7, pp.5678-5682 |
5 |
원문
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학술지
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2012 |
Variation in the Electrical Properties of 100 V/100 a Rated Mesh and Stripe TDMOSFETs (Trench Double-Diffused MOSFETs) for Motor Drive Applications
Na Kyoung Il Journal of the Korean Physical Society, v.60 no.10, pp.1508-1512 |
0 |
원문
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학술지
|
2012 |
Effect of Curing Temperature on Nano-Silver Paste Ink for Organic Thin Film Transistors
Minseok Kim Journal of Nanoscience and Nanotechnology, v.12 no.4, pp.3272-3275 |
6 |
원문
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학술지
|
2012 |
Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors
박준용 Journal of Vacuum Science and Technology B, v.30 no.4, pp.1-5 |
19 |
원문
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학술지
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2012 |
High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
박동진 Solid-State Electronics, v.75, pp.97-101 |
2 |
원문
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학술지
|
2012 |
Current Stress Induced Electrical Instability in Transparent Zinc Tin Oxide Thin-Film Transistors
Cheong Woo-Seok Journal of Nanoscience and Nanotechnology, v.12 no.4, pp.3421-3424 |
17 |
원문
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학술지
|
2012 |
Modeling of Amorphous InGaZnO Thin Film Transistors using an Empirical Mobility Function based on the Exponential Deep and Tail States
Jaeheon Shin Thin Solid Films, v.520 no.10, pp.3800-3802 |
10 |
원문
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학술지
|
2012 |
Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device
Seo Giwan Applied Physics Letters, v.100 no.1, pp.1-3 |
54 |
원문
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학술지
|
2011 |
Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs
Jun Myungsim Semiconductor Science and Technology, v.26 no.12, pp.1-4 |
0 |
원문
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학술지
|
2011 |
Suppression in the Negative Bias Illumination Instability of Zn-Sn-O Transistor Using Oxygen Plasma Treatment
Yang Shinhyuk Applied Physics Letters, v.99 no.10, pp.1-3 |
79 |
원문
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학술지
|
2011 |
Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor
허준영 Thin Solid Films, v.519 no.20, pp.6868-6871 |
35 |
원문
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학술지
|
2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29 no.3, pp.1-4 |
1 |
원문
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학술지
|
2011 |
Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
Yang Shinhyuk Applied Physics Letters, v.98 no.10, pp.1-3 |
30 |
원문
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학술지
|
2011 |
Light Response of Top Gate InGaZnO Thin Film Transistor
Park Sang-Hee Japanese Journal of Applied Physics, v.50 no.3S, pp.1-4 |
6 |
원문
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학술지
|
2011 |
Transition of Dominant Instability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Transistor
Oh Himchan Applied Physics Letters, v.98 no.3, pp.1-3 |
94 |
원문
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학술지
|
2010 |
Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application
Musarrat Hasan Electrochemical and Solid-State Letters, v.13 no.3, pp.H80-H82 |
2 |
원문
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학술지
|
2010 |
Fabrication of Self-Aligned TFTs with a Ultra-Low Temperature Polycrystalline Silicon Process on Metal Foils
Jaehyun Moon Solid-State Electronics, v.54 no.11, pp.1326-1331 |
2 |
원문
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학술지
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2010 |
P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain
Choi Sungjin IEEE Transactions on Electron Devices, v.57 no.8, pp.1737-1742 |
4 |
원문
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학술대회
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2010 |
A 1 V 6-bit 2.4 GS/s Nyquist CMOS DAC for UWB Systems
Bong Chan Kim International Microwave Symposium (IMS) 2010, pp.912-915 |
11 |
원문
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학술지
|
2009 |
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
이정민 Applied Physics Letters, v.94 no.22, pp.1-4 |
105 |
원문
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학술지
|
2009 |
Channel Protection Layer Effect on the Performance of Oxide TFTs
Park Sang-Hee ETRI Journal, v.31 no.6, pp.653-659 |
76 |
원문
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학술지
|
2009 |
Impact of Device Configuration on the Temperature Instability of Al-Zn-Sn-O thin Film Transistors
Jae Kyeong Jeong Applied Physics Letters, v.95 no.12, pp.123505-1-123505-3 |
56 |
원문
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학술지
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2009 |
High Performance thin Film Transistor with Cosputtered Amorphous Zn-In-Sn-O Channel : Combinatorial Approach
Ryu Min Ki Applied Physics Letters, v.95 no.7, pp.072104-1-072104-3 |
115 |
원문
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학술지
|
2009 |
Flexible Organic Thin-Film Transistors for Photodetectors
권재홍 Journal of the Korean Physical Society, v.55 no.1, pp.72-75 |
8 |
원문
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학술지
|
2009 |
Ku-Band High Power Amplifier MMIC with On-Chip Gate Biasing Circuit
Youn Sub Noh Electronics Letters, v.45 no.15, pp.794-795 |
4 |
원문
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학술지
|
2009 |
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
백강준 Solid-State Electronics, v.53 no.11, pp.1165-1168 |
22 |
원문
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학술지
|
2009 |
Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit
Youn Sub Noh ETRI Journal, v.31 no.3, pp.247-253 |
9 |
원문
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학술지
|
2009 |
Effect of UV/ozone Treatment on Hysteresis of Pentacene Thin-Film Transistor with Polymer Gate Dielectric
Koo Jae Bon Solid-State Electronics, v.53 no.6, pp.621-625 |
38 |
원문
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학술지
|
2009 |
Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States
Jaeheon Shin Journal of the Korean Physical Society, v.54 no.1, pp.527-530 |
22 |
원문
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학술지
|
2009 |
Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
최성진 IEEE Electron Device Letters, v.30 no.1, pp.78-81 |
20 |
원문
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학술지
|
2008 |
Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
Lars Herlogsson Advanced Materials, v.20 no.24, pp.4708-4713 |
136 |
원문
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학술지
|
2008 |
Polarity Effects of Polymer Gate Electrets on Non-Volatile Organic Field-Effect Transistor Memory
Back Gangjoon Advanced Functional Materials, v.18 no.22, pp.3678-3685 |
252 |
원문
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학술지
|
2008 |
Current Flow Mechanisms of Platinum-Silicided p-Type Schottky Barrier MOSFETs
Jang Moon Gyu Journal of the Korean Physical Society, v.53 no.4, pp.2175-2178 |
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학술지
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2008 |
Transparent Thin-film Transistors with Zinc Oxide Semiconductor Fabricated by Reactive Sputtering using Metallic Zinc target
Cheong Woo-Seok Thin Solid Films, v.516 no.22, pp.8159-5164 |
12 |
원문
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학술지
|
2008 |
Effects of UV/ozone Treatment of a Polymer Dielectric Surface on the Properties of Pentacene Thin Films for Organic Transistors
한승진 Journal of Applied Physics, v.104 no.1, pp.1-4 |
14 |
원문
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학술지
|
2008 |
Fabrication and Properties of MFISFET Using LiNbO3LiNbO3 Ferroelectric Films
Jung Soonwon 전기학회논문지 P, v.57 no.2, pp.135-139 |
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학술지
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2008 |
High-gain and Low-hysteresis Properties of Organic Inverters with an UV-photo Patternable Gate Dielectrics
Lim Sangchul Thin Solid Films, v.516 no.12, pp.4330-4333 |
5 |
원문
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학술지
|
2008 |
Molecular Conductance Switch-On of Single Ruthenium Complex Molecules
Seo Kyoung Ja Journal of the American Chemical Society, v.130 no.8, pp.2553-2559 |
106 |
원문
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학술지
|
2008 |
Organic Field-effect Transistors with Thermal-cured Polyacrylate Gate Dielectric Films
Gi Heon Kim Thin Solid Films, v.516 no.7, pp.1574-1577 |
4 |
원문
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학술대회
|
2008 |
Analytical Modeling of IGZO Thin Film Transistors Based on the Exponential Deep and Tail States
Jaeheon Shin International Thin-Film Transistor Conference (ITC) 2008, pp.197-198 |
|
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학술지
|
2007 |
Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge-Sb-Te Alloy Films
Yoon Sung Min Japanese Journal of Applied Physics, v.46 no.11, pp.7225-7231 |
17 |
원문
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학술지
|
2007 |
Photo-assisted Electrical Gating in a Two-terminal Device based on Vanadium Dioxide Thin Film
Lee Yong Wook Optics Express, v.15 no.19, pp.12108-12113 |
34 |
원문
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학술대회
|
2007 |
Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel
Hyung Sup Yoon International Conference on Indium Phosphide and Related Materials (IPRM) 2007, pp.110-113 |
0 |
원문
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학술지
|
2007 |
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon Journal of the Korean Physical Society, v.50 no.3, pp.889-892 |
4 |
원문
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학술지
|
2007 |
Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
Sun Jin Yun Electrochemical and Solid-State Letters, v.10 no.3, pp.H90-H93 |
11 |
원문
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학술지
|
2007 |
Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric
Koo Jae Bon Applied Physics Letters, v.90 no.13, pp.1-3 |
56 |
원문
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학술지
|
2007 |
Doping Effect of Solution-processed Thin-film Transistors based on Polyfluorene
임은희 Journal of Materials Chemistry, v.17 no.14, pp.1416-1420 |
67 |
원문
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학술지
|
2007 |
Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric
Koo Jae Bon Thin Solid Films, v.515 no.5, pp.3132-3137 |
26 |
원문
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학술지
|
2006 |
Threshold Voltage Control of Pentacene Thin-Film Transistor with Dual-Gate Structure
Koo Jae Bon Journal of Information Display, v.7 no.3, pp.27-30 |
6 |
원문
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학술지
|
2006 |
Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure
Koo Jae Bon Electrochemical and Solid-State Letters, v.9 no.11, pp.G320-G322 |
9 |
원문
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학술지
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2006 |
Ni/Au Contact to Silicon Quantum Dot Light-Emitting Diodes for the Enhancement of Carrier Injection and Light Extraction Efficiency
김백현 Applied Physics Letters, v.89 no.6, pp.1-3 |
41 |
원문
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학술대회
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2006 |
Threshold Voltage control of Pentacene Thin-Film Transistor with Dual-Gate Structure
Koo Jae Bon International Meeting on Information Display 2006, pp.1103-1106 |
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학술지
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2006 |
Solution-Processable Field-Effect Transistor Using a Fluorene- and Selenophene-Based Copolymer as an Active Layer
김영미 Macromolecules, v.39 no.12, pp.4081-4085 |
90 |
원문
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학술대회
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2006 |
Transparent ZnO Thin Film Transistor Array for the Application of Transparent AM-OLED Display
Park Sang-Hee International Symposium, Seminar and Exhibition (SID) 2006, pp.25-28 |
41 |
원문
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학술지
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2006 |
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156 no.7-8, pp.533-536 |
25 |
원문
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학술지
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2006 |
Design and Optical Properties of ZnS: Mn Thin-Film Electroluminescent Devices on 2D SiO2 Corrugated Photonic Crystal Substrates
도영락 Journal of the Electrochemical Society, v.153 no.4, pp.H71-H77 |
3 |
원문
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학술지
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2006 |
Extremely Low Noise Characteristics of 0.15μm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45 no.4B, pp.3380-3383 |
2 |
원문
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학술지
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2006 |
The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156 no.2-4, pp.99-103 |
38 |
원문
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학술지
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2005 |
Novel Method for Combining Flexible Organic Light-Emitting Diodes with Organic Thin-Film Transistors
Taehyoung Zyung Journal of the Korean Physical Society, v.48 no.1, pp.S111-S114 |
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학술지
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2005 |
DC and RF Characteristics of 0.15 μm Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27 no.6, pp.685-690 |
5 |
원문
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학술지
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2005 |
Abrupt Metal-Insulator Transition Observedin VO2 thin Films Induced by a Switching Voltage Pulse
Chae Byung Gyu Physica B : Condensed Matter, v.369 no.1-4, pp.76-80 |
126 |
원문
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학술대회
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2005 |
Design of the Multipaction Free High Power Ka-band Diplexer with an E-plane T-junction
Yun So-Hyeun Asia-Pacific Conference on Communications (APCC) 2005, pp.582-585 |
8 |
원문
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학술지
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2004 |
A New SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC
손원소 ETRI Journal, v.26 no.1, pp.7-12 |
6 |
원문
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학술지
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2002 |
CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
Jaeheon Shin IEEE Photonics Technology Letters, v.14 no.8, pp.1031-1033 |
49 |
원문
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