학술지
|
2023 |
Analysis of issues in gate recess etching in the InAlAs/ InGaAs HEMT manufacturing process
민병규 ETRI Journal, v.45 no.1, pp.171-179 |
2 |
원문
|
학술지
|
2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
칸무하메드 ACS Applied Materials & Interfaces, v.10 no.28, pp.23961-23967 |
17 |
원문
|
학술지
|
2017 |
Very Large Suspended Graphene as an Efficient Electron-transparent Gate Electrode
전효진 Carbon, v.119, pp.371-377 |
5 |
원문
|
학술지
|
2016 |
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
장우진 ETRI Journal, v.38 no.1, pp.133-140 |
7 |
원문
|
학술지
|
2014 |
Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
황치선 IEEE Electron Device Letters, v.35 no.3, pp.360-362 |
50 |
원문
|
학술지
|
2013 |
Analysis of Failure in Miniature X-ray Tubes with Gated Carbon Nanotube Field Emitters
강준태 ETRI Journal, v.35 no.6, pp.1164-1167 |
17 |
원문
|
학술지
|
2013 |
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
이관형 ACS Nano, v.7 no.9, pp.7931-7936 |
945 |
원문
|
학술지
|
2013 |
Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
원종일 ETRI Journal, v.35 no.4, pp.603-609 |
12 |
원문
|
학술대회
|
2013 |
Analysis of CNT Emitter-Based Miniature X-Ray Tubes for Stable and Reliable Operation
강준태 International Vacuum Nanoelectronics Conference (IVNC) 2013, pp.1-2 |
0 |
원문
|
학술지
|
2012 |
A Novel Trench Gate MOSFET with Multiple Layered Gate Oxide for Highly Reliable Operation
김상기 Journal of the Korean Physical Society, v.60 no.10, pp.1552-1556 |
2 |
원문
|
학술지
|
2010 |
High Mobility Top-Gated Poly(3-hexylthiophene) Field-Effect Transistors with High Work-Function Pt Electrodes
백강준 Thin Solid Films, v.518 no.14, pp.4024-4029 |
54 |
원문
|
학술지
|
2010 |
Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device
S. V. Jagadeesh Chandra Journal of the Electrochemical Society, v.157 no.5, pp.H546-H550 |
14 |
원문
|
학술지
|
2009 |
Passivation of Bottom-Gate IGZO Thin Film Transistors
조두희 Journal of the Korean Physical Society, v.54 no.1, pp.531-534 |
43 |
원문
|
학술대회
|
2008 |
Highly Conductive and Transparent Electrodes for the Application of AM-OLED Display
유민기 International Meeting on Information Display (IMID) 2008, pp.813-815 |
1 |
|
학술지
|
2007 |
Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics
최철종 Electrochemical and Solid-State Letters, v.11 no.2, pp.H22-H25 |
0 |
원문
|
학술지
|
2007 |
Novel Organic Inverters with Dual-Gate Pentacene Thin-Film Transistor
구재본 Organic Electronics, v.8 no.5, pp.552-558 |
54 |
원문
|
학술지
|
2006 |
Threshold Voltage Control of Pentacene Thin-Film Transistor with Dual-Gate Structure
구재본 Journal of Information Display, v.7 no.3, pp.27-30 |
6 |
원문
|
학술지
|
2006 |
Pentacene Thin-Film Transistors and Inverters with Dual-Gate Structure
구재본 Electrochemical and Solid-State Letters, v.9 no.11, pp.G320-G322 |
9 |
원문
|
학술지
|
2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
최철종 Electrochemical and Solid-State Letters, v.9 no.7, pp.G228-G230 |
1 |
원문
|