학술지
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2022 |
Efects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
김호성 Nanoscale Research Letters, v.17, pp.1-7 |
1 |
원문
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학술대회
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2021 |
Conducted Electromagnetic Interference Energy Harvesting for Green Communication of IoT Sensors
형창희 International Conference on Information and Communication Technology Convergence (ICTC) 2021, pp.1743-1746 |
0 |
원문
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학술지
|
2021 |
Effects of Moisture-Proof Back Passivation Layers of Al2O3 and AlxTi1-xOy Films on Efficiency Improvement and Color Modulation in Transparent a-Si:H Solar Cells
김지은 ACS Applied Materials & Interfaces, v.13 no.4, pp.4968-4974 |
10 |
원문
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학술지
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2020 |
Electrically Stable Polymer-only Dielectrics for Organic Field-effect Transistors with Low Gate Leakage Current
남수지 Organic Electronics, v.85, pp.1-5 |
12 |
원문
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학술지
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2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9 no.17, pp.1-13 |
5 |
원문
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학술지
|
2019 |
An Eco-friendly Flexible Piezoelectric Energy Harvester That Delivers High Output Performance is Based on Lead-free MASnI3 Films and MASnI3-PVDF Composite Films
Swathi Ippili Nano Energy, v.57, pp.911-923 |
88 |
원문
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학술지
|
2019 |
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
김정길 Solid-State Electronics, v.152, pp.24-28 |
9 |
원문
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학술지
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2018 |
High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 |
30 |
원문
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학술지
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
손동혁 Solid-State Electronics, v.141, pp.7-12 |
8 |
원문
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학술지
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
조영우 Solid-State Electronics, v.141, pp.7-12 |
8 |
원문
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학술지
|
2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
김진식 Solid-State Electronics, v.140, pp.12-17 |
8 |
원문
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학술지
|
2017 |
Power Semiconductor SMD Package Embedded in Multilayered Ceramic for Low Switching Loss
정동윤 ETRI Journal, v.39 no.6, pp.866-873 |
11 |
원문
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학술지
|
2017 |
Flexible Integrated OLED Substrates Prepared by Printing and Plating Process
조두희 Organic Electronics, v.50, pp.170-176 |
44 |
원문
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학술지
|
2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
이종민 Journal of the Korean Physical Society, v.71 no.6, pp.365-369 |
5 |
원문
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학술지
|
2017 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
이현수 Journal of Semiconductor Technology and Science, v.17 no.3, pp.354-362 |
1 |
원문
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학술지
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2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
도재원 Thin Solid Films, v.628, pp.31-35 |
8 |
원문
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학술지
|
2017 |
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems
정동윤 ETRI Journal, v.39 no.1, pp.62-68 |
14 |
원문
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학술지
|
2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
이종민 Current Applied Physics, v.17 no.2, pp.157-161 |
12 |
원문
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학술지
|
2016 |
Improved Stability of Electrical Properties of Nitrogen-added Al2O3 Films Grown by PEALD as Gate Dielectric
이다정 Materials Research Bulletin, v.83, pp.597-602 |
10 |
원문
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학술지
|
2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
안호균 ETRI Journal, v.38 no.4, pp.675-684 |
4 |
원문
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학술지
|
2016 |
Transformer-Reuse Reconfigurable Synchronous Boost Converter with 20 mV MPPT-Input, 88% Efficiency, and 37 mW Maximum Output Power
임종필 ETRI Journal, v.38 no.4, pp.654-664 |
4 |
원문
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학술대회
|
2016 |
Characteristics of Enhanced-mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
이종민 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
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학술지
|
2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
박준보 Applied Physics Letters, v.109 no.3, pp.1-5 |
5 |
원문
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학술지
|
2016 |
Photo-patternable High-k ZrOx Dielectrics Prepared using Zirconium Acrylate for Low-voltage-operating Organic Complementary Inverters
정용진 Organic Electronics, v.33, pp.40-47 |
23 |
원문
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학술지
|
2016 |
Diode and MOSFET Properties of Trench-Gate-Type Super-Barrier Rectifier with P-Body Implantation Condition for Power System Application
원종일 ETRI Journal, v.38 no.2, pp.244-251 |
8 |
원문
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학술지
|
2016 |
A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor
신현우 Journal of Nanoscience and Nanotechnology, v.16 no.3, pp.2632-2636 |
3 |
원문
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학술대회
|
2015 |
Suppression of Leakage Current in Dual Schottky Barrier Diode using BOE Treatment
장현규 International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1 |
|
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학술지
|
2015 |
0.34 VT AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
이현수 IEEE Electron Device Letters, v.36 no.11, pp.1132-1134 |
49 |
원문
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학술지
|
2015 |
Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates
정순원 Journal of Nanoscience and Nanotechnology, v.15 no.10, pp.7513-7517 |
4 |
원문
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학술지
|
2015 |
High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer
조두형 Japanese Journal of Applied Physics, v.54 no.12, pp.1-5 |
5 |
원문
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학술대회
|
2015 |
Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure
이현수 International Conference on Solid State Devices and Materials (SSDM) 2015, pp.176-177 |
|
|
학술지
|
2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
조규준 Journal of the Korean Physical Society, v.67 no.4, pp.682-686 |
3 |
원문
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학술지
|
2015 |
Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
장현규 Japanese Journal of Applied Physics, v.54 no.7, pp.1-5 |
3 |
원문
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학술지
|
2015 |
Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process
김정진 Japanese Journal of Applied Physics, v.54 no.3, pp.1-3 |
1 |
원문
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학술지
|
2015 |
A Feasibility Study on the Adoption of Human Body Communication for Medical Service
형창희 IEEE Transactions on Circuits and Systems II : Express Briefs, v.62 no.2, pp.169-173 |
19 |
원문
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학술지
|
2015 |
Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures
정순원 ECS Solid State Letters, v.4 no.1, pp.P1-P3 |
31 |
원문
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학술대회
|
2014 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
조규준 International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131 |
|
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학술지
|
2014 |
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
V Rajagopal Reddy Semiconductor Science and Technology, v.29 no.7, pp.1-6 |
26 |
원문
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학술지
|
2014 |
Low Onset Voltage of GaN on Si Schottky Barrier Diode Using Various Recess Depths
박영락 Electronics Letters, v.50 no.16, pp.1164-1165 |
15 |
원문
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학술지
|
2014 |
Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
안호균 Solid-State Electronics, v.95, pp.42-45 |
15 |
원문
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학술지
|
2014 |
Analysis of the Degradation of AlGaN/GaN HEMTs by High-temperature Operation Tests
이종민 Journal of the Korean Physical Society, v.64 no.10, pp.1446-1450 |
2 |
원문
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학술지
|
2013 |
Analysis of Failure in Miniature X-ray Tubes with Gated Carbon Nanotube Field Emitters
강준태 ETRI Journal, v.35 no.6, pp.1164-1167 |
17 |
원문
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학술지
|
2013 |
Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
정순원 ETRI Journal, v.35 no.4, pp.734-737 |
17 |
원문
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학술대회
|
2013 |
Analysis of CNT Emitter-Based Miniature X-Ray Tubes for Stable and Reliable Operation
강준태 International Vacuum Nanoelectronics Conference (IVNC) 2013, pp.1-2 |
0 |
원문
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학술지
|
2012 |
Important Role of Polymorphs of Organic Semiconductors on the Reduction of the Current Leakage in an Organic Capacitor
배진혁 Molecular Crystals and Liquid Crystals, v.567 no.1, pp.57-6286 |
1 |
원문
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학술지
|
2012 |
A Novel Trench Gate MOSFET with Multiple Layered Gate Oxide for Highly Reliable Operation
김상기 Journal of the Korean Physical Society, v.60 no.10, pp.1552-1556 |
2 |
원문
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학술지
|
2012 |
The Characteristics of Sub-10 nm Gate-length Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect-Transistors
장문규 Thin Solid Films, v.520 no.6, pp.2166-2169 |
1 |
원문
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학술지
|
2012 |
The Characteristics of sub-10 nm Gate-length Erbium-silicided n-type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect-Transistors
장문규 Thin Solid Films, v.520 no.6, pp.2166-2169 |
1 |
원문
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학술지
|
2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
전명심 Journal of Vacuum Science and Technology B, v.29 no.3, pp.1-4 |
1 |
원문
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학술지
|
2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
윤성민 Journal of the Korean Physical Society, v.58 no.5, pp.1494-1499 |
2 |
원문
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학술지
|
2010 |
Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
장문규 Journal of Vacuum Science and Technology B, v.28 no.4, pp.799-801 |
6 |
원문
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학술지
|
2010 |
Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers
V. Janardhanam Journal of Alloys and Compounds, v.504 no.1, pp.146-150 |
85 |
원문
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학술지
|
2010 |
Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200°C
윤성민 Advanced Functional Materials, v.20 no.6, pp.921-926 |
103 |
원문
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학술지
|
2010 |
Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
정순원 Current Applied Physics, v.10 no.1 SUPPL., pp.e58-e61 |
31 |
원문
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학술지
|
2010 |
Optical and Electrical Properties of AlxTi1-xO Films
임정욱 Journal of the Korean Physical Society, v.56 no.1, pp.96-99 |
3 |
원문
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학술지
|
2009 |
비휘발성 메모리 응용을 위한 ALD법을 이용한 Al2O3 절연막의 특성
정순원 전기학회논문지, v.58 no.12, pp.2420-2424 |
|
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학술지
|
2009 |
Biosensors using the Si Banochannel Junction-Isolated from the Si bulk Substrate
안창근 Journal of Applied Physics, v.106 no.11, pp.1-6 |
6 |
원문
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학술지
|
2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
윤성민 Journal of Physics D : Applied Physics, v.42 no.24, pp.1-6 |
31 |
원문
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학술지
|
2009 |
A 0.6-V Delta-Sigma Modulator With Subthreshold-Leakage Suppression Switches
노형동 IEEE Transactions on Circuits and Systems II : Express Briefs, v.56 no.11, pp.825-829 |
35 |
원문
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학술지
|
2009 |
Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
윤성민 Japanese Journal of Applied Physics, v.48 no.9, pp.1-4 |
3 |
원문
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학술지
|
2009 |
Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer
정순원 Electrochemical and Solid-State Letters, v.12 no.9, pp.H325-H328 |
12 |
원문
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학술지
|
2009 |
Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
문란주 Journal of the Electrochemical Society, v.156 no.8, pp.H621-H624 |
6 |
원문
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학술지
|
2009 |
Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
신진욱 Japanese Journal of Applied Physics, v.48 no.4, pp.1-4 |
0 |
원문
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학술지
|
2009 |
Ultra-thin Gate Dielectrics for Top Gate Polymer Field-effect Transistors
노용영 Organic Electronics, v.10 no.1, pp.174-180 |
118 |
원문
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학술지
|
2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
정우석 Journal of the Korean Physical Society, v.54 no.1, pp.473-477 |
1 |
원문
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학술대회
|
2009 |
Effects of Active Thickness in Oxide Semiconductor TFTs
황치선 Society for Information Display (SID) International Symposium 2009, pp.1107-1109 |
9 |
원문
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학술지
|
2008 |
20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
장문규 Applied Physics Letters, v.93 no.19, pp.1-3 |
11 |
원문
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학술지
|
2008 |
Direct-Type Silicon Pixel Detector for a Large-Area Hybrid X-Ray Imaging Device
박건식 Journal of the Korean Physical Society, v.53 no.4, pp.2185-2191 |
|
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학술지
|
2008 |
Enhancement of a Top Emission Organic Light Emitting Diode with a Double Buffer Layer
정승묵 Synthetic Metals, v.158 no.14, pp.561-564 |
7 |
원문
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학술지
|
2008 |
The Improvement of Mechanical and Dielectric Properties of Ordered Mesoporous Silica Film using TEOS-MTES Mixed Silica Precursor
하태정 Ceramics International, v.34 no.4, pp.947-951 |
24 |
원문
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학술지
|
2008 |
3.5-Inch QCIF AMOLED Panels with Ultra-low-Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
김용해 ETRI Journal, v.30 no.2, pp.308-314 |
8 |
원문
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학술지
|
2008 |
A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
안창근 Materials Science and Engineering B, v.147 no.2-3, pp.183-186 |
3 |
원문
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학술대회
|
2007 |
Fabrication of a Direct-Type Silicon Pixel Detector for a Large Area Hybrid X-Ray Imaging Device
박건식 Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) 2007, pp.3446-3449 |
1 |
원문
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학술지
|
2007 |
Consideration of the Leakage-Current and the Radiation-Response Characteristics of Silicon PIN Detectors with Different N-Type Substrates and their Application to a Personal γ-ray Dosimeter
박종문 Journal of the Korean Physical Society, v.51 no.1, pp.10-17 |
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학술지
|
2007 |
Degradation Analysis in Asymmetric Sampled Grating Distributed Feedback Laser Diodes
주한성 Microelectronics Journal, v.38 no.6-7, pp.740-745 |
0 |
원문
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학술대회
|
2006 |
Effects of the Resistivity and Crystal Orientation of the Silicon PIN Detector on the Dark Current and Radiation Response Characteristics
박건식 IEEE Nuclear Science Symposium Conference Record 2006, pp.1068-1072 |
3 |
원문
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학술지
|
2006 |
Design and Fabrication of the Double-Sided Silicon Microstrip Sensor
박환배 Journal of the Korean Physical Society, v.49 no.4, pp.1401-1406 |
|
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학술대회
|
2006 |
Two Dimensional 32x32 InGaAs/InP Photodiode Arrays and Dark Current Characteristics Limited by the Diffusion and Generation-Recombiniation
남은수 International Conference on Optical Internet and Next Generation Network (COIN-NGNCON) 2006, pp.78-80 |
1 |
원문
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학술지
|
2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors
장문규 Japanese Journal of Applied Physics, v.45 no.2A, pp.730-732 |
32 |
원문
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학술대회
|
2006 |
High Performance Silicon PIN Photodiode for Near-IR Spectral Range (2): Leakage Current and Photo-response Characteristics
박건식 한국반도체 학술 대회 (KCS) 2006, pp.241-243 |
|
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학술지
|
2006 |
Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
임정욱 Electrochemical and Solid-State Letters, v.9 no.1, pp.F8-F11 |
9 |
원문
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학술지
|
2005 |
Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
임정욱 Electrochemical and Solid-State Letters, v.8 no.9, pp.F25-F28 |
15 |
원문
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학술지
|
2005 |
Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers
한성주 IEEE Transactions on Device and Materials Reliability, v.5 no.2, pp.262-267 |
6 |
원문
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학술대회
|
2005 |
A Single-Pole 6-Throw (SP6T) Antenna Switch Using Metal-Contact RF MEMS Switches for Multi-Band Applications
이재우 IEEE MTT-S International Microwave Symposium 2005, pp.931-934 |
8 |
원문
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학술지
|
2005 |
Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
임정욱 ETRI Journal, v.27 no.1, pp.118-121 |
68 |
원문
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학술지
|
2003 |
Excimer Laser Annealed Poly-Si Thin Film Transistor with Self-aligned Lightly Doped Drain Structure
김용해 Thin Solid Films, v.440 no.1-2, pp.169-173 |
12 |
원문
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학술지
|
2003 |
Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor
Kyoung Jin Choi Journal of the Korean Physical Society, v.43 no.2, pp.253-258 |
8 |
|
학술지
|
2002 |
Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors
최경진 Japanese Journal of Applied Physics, v.41 no.5A, pp.2894-2899 |
7 |
원문
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