학술대회
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2022 |
CapOS: Capacitor Error Resilience for Energy Harvesting Systems
최종욱 International Conference on Embedded Software (EMSOFT) 2022 / IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, pp.4539-4550 |
7 |
원문
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학술대회
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2022 |
CapOS: Capacitor Error Resilience for Energy Harvesting Systems
조현우 International Conference on Embedded Software (EMSOFT) 2022 / IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, pp.4539-4550 |
7 |
원문
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학술지
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2022 |
Improvement in nonvolatile memory operations for metal-ferroelectric-insulator-semiconductor capacitors using HfZrO2 and ZrO2 thin films as ferroelectric and insulator layers
김예리아론 Journal of Physics D : Applied Physics, v.55 no.33, pp.1-9 |
0 |
원문
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학술지
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2022 |
Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming
양종헌 IEEE Transactions on Electron Devices, v.69 no.1, pp.120-126 |
0 |
원문
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학술지
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2021 |
Fast and Secure Global-Heap for Memory-Centric Computing
차명훈 Journal of Supercomputing, v.77 no.11, pp.13262-13291 |
1 |
원문
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학술지
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2020 |
Optimized Annealing Conditions to Enhance Stability of Polarization in Sputtered HfZrOx Layers for Non-volatile Memory Applications
김예리아론 Current Applied Physics, v.20 no.12, pp.1441-1446 |
15 |
원문
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학술지
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2020 |
Ferroelectric Switching in Trilayer Al2O3/HfZrOx/Al2O3 Structure
임솔이 Micromachines, v.11 no.10, pp.1-10 |
7 |
원문
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학술대회
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2020 |
AniFilter: Parallel and Failure-Atomic Cuckoo Filter for Non-Volatile Memories
오형준 European Conference on Computer Systems (EuroSys) 2020, pp.1-15 |
2 |
원문
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학술지
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2020 |
Wireless Transceiver Aided Run-Time Secret Key Extraction for IoT Device Security
오미경 IEEE Transactions on Consumer Electronics, v.66 no.1, pp.11-21 |
12 |
원문
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학술대회
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2019 |
Achieving Stagnation-Free Intermittent Computation with Boundary-Free Adaptive Execution
최종욱 Real-Time and Embedded Technology and Applications Symposium (RTAS) 2019, pp.331-344 |
32 |
원문
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학술지
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2018 |
Deposition Pressure Dependent Electric Properties of (Hf; Zr)O2 Thin Films Made by RF Sputtering Deposition Method
문승언 Journal of the Korean Physical Society, v.73 no.11, pp.1712-1715 |
0 |
원문
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학술대회
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2018 |
Nonvolatile Memory Devices of ReS2 Nanosheets- Polyvinylalcohol Composites
양준재 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2018, pp.1-1 |
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학술지
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2018 |
Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface
김태윤 ACS Applied Materials & Interfaces, v.10 no.31, pp.26405-26412 |
13 |
원문
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학술지
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2018 |
Solution-Processed Flexible NiO Resistive Random Access Memory Device
김수정 Solid-State Electronics, v.142, pp.56-61 |
9 |
원문
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학술지
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2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power Consumption
김경아 IEEE Transactions on Electron Devices, v.63 no.1, pp.394-401 |
5 |
원문
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학술지
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2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide-Semiconductor Thin-Film Transistors for Low-Power Consumption
변춘원 IEEE Transactions on Electron Devices, v.63 no.1, pp.394-401 |
5 |
원문
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학술지
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2015 |
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
정순원 Journal of Vacuum Science and Technology B, v.33 no.5, pp.1-4 |
17 |
원문
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학술대회
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2015 |
Flexible Nonvolatile Memory Transistors Using IGZO-Channel and Organic Ferroelectric Polymer P(VDF-TrFE) Fabricated on Elastomer Substrate
정순원 European Materials Research Society (E-MRS) Meeting 2015 (Spring), pp.1-1 |
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학술지
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2015 |
Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer
정순원 Organic Electronics, v.16, pp.46-53 |
43 |
원문
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학술지
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2013 |
AUTOSAR 플랫폼 기반 CDD를 활용한 비휘발성 메모리 수명 연장 기법
신주석 대한임베디드공학회논문지, v.8 no.5, pp.235-242 |
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원문
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학술지
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2013 |
Nonvolatile Memory Performance Improvements for Solution-Processed Thin-Film Transistors with Composition-Modified In-Zn-Ti-O Active Channel and Ferroelectric Copolymer Gate Insulator
박준용 Organic Electronics, v.14 no.9, pp.2148-2157 |
6 |
원문
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학술지
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2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
박래만 Electronic Materials Letters, v.9 no.4, pp.467-469 |
6 |
원문
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학술지
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2013 |
Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
최민섭 Nature Communications, v.4, pp.1-7 |
553 |
원문
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학술대회
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2012 |
Non-Volatile Memory Management Scheme for Automotive Electronic Control Units
신주석 International Conference on Connected Vehicles and Expo (ICCVE) 2012, pp.237-238 |
2 |
원문
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학술대회
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2012 |
Printed Indium Zinc Oxide Nonvolatile Memory Thin-film Transistors with P(VDF-TrFE) Gate Insulator
Asian Meeting on Ferroelectrics (AMF) 2012, pp.1-1 |
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학술대회
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2012 |
Nonvolatile Memory Operations of Solution-Processed In-Zn-Ti-O Thin-Film Transistors with Ferroelectric Copolymer Gate Insulator
MRS Meeting 2012 (Fall), pp.1-1 |
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학술대회
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2012 |
Design of New AUTOSAR Memory Stack for Diagnostic Message
황현용 International Conference on Information and Communication Technology Convergence (ICTC) 2012, pp.559-560 |
1 |
원문
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학술대회
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2012 |
Transparent Nonvolatile Memory Device using Silicon Quantum Dots
박래만 International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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학술대회
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2012 |
Nonvolatile Memory Thin-Film Transistors using Organic Ferroelectric Gate Insulator
Optics+Photonics 2012, pp.1-1 |
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학술지
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2012 |
High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory
백강준 Advanced Functional Materials, v.22 no.14, pp.2915-2926 |
196 |
원문
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학술대회
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2012 |
Organic Nonvolatile Memory TFTs with P(VDF-TrFE) Dielectrics on Plastic Substrate
International Conference on Solid Films and Surfaces (ICSFS) 2012, pp.1-1 |
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학술지
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2012 |
Organic Nonvolatile Memory Devices Fabricated by Using an Inkjet Printing Method
양용석 Journal of the Korean Physical Society, v.60 no.10, pp.1504-1507 |
5 |
원문
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학술지
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519 no.18, pp.6174-6177 |
0 |
원문
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학술지
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2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
윤성민 IEEE Transactions on Electron Devices, v.58 no.7, pp.2135-2142 |
20 |
원문
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학술지
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2011 |
Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application
이승윤 Japanese Journal of Applied Physics, v.50 no.6 PART 2, pp.1-5 |
0 |
원문
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학술지
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2011 |
Bending Characteristics of Ferroelectric Poly(Vinylidene Fluoride Trifluoroethylene) Capacitors Fabricated on Flexible Polyethylene Naphthalate Substrate
윤성민 Current Applied Physics, v.11 no.3 SUPPL., pp.S219-S224 |
15 |
원문
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학술지
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2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
윤성민 Journal of the Korean Physical Society, v.58 no.5, pp.1494-1499 |
2 |
원문
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학술지
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2011 |
Nonvolatile Memory Thin-Film Transistors Using an Organic Ferroelectric Gate Insulator and an Oxide Semiconducting Channel
윤성민 Semiconductor Science and Technology, v.26 no.3, pp.1-25 |
40 |
원문
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학술지
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2010 |
Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
정후영 Advanced Functional Materials, v.20 no.22, pp.3912-3917 |
166 |
원문
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학술지
|
2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
정후영 Nano Letters, v.10 no.11, pp.4381-4386 |
529 |
원문
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학술지
|
2010 |
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
김종윤 Nano Letters, v.10 no.11, pp.4381-4386 |
529 |
원문
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학술지
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2010 |
Nonvolatile Memory Transistors Using Solution-Processed Zinc-Tin Oxide and Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene)
윤성민 Organic Electronics, v.11 no.11, pp.1746-1752 |
18 |
원문
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학술지
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2010 |
Nonvolatile Memory Organic Field Effect Transistor Induced by the Steric Hindrance Effects of Organic Molecules
정미희 Journal of Materials Chemistry, v.20 no.37, pp.8016-8020 |
24 |
원문
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학술대회
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2010 |
Flexible Nonvolatile Memory Thin-Film Transistors Using Oxide Semiconductor Active Channel and Organic Ferroelectric Gate Insulator
윤성민 Asian Meeting on Ferroelectricity (AMF) 2010 / Asian Meeting on Electroceramics (AMEC) 2010, pp.321-321 |
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학술지
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2010 |
Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer
윤성민 Journal of the Electrochemical Society, v.157 no.7, pp.H771-H778 |
3 |
원문
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학술지
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2010 |
Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors
윤성민 Japanese Journal of Applied Physics, v.49 no.4 PART 2, pp.1-6 |
20 |
원문
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학술지
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2010 |
Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200°C
윤성민 Advanced Functional Materials, v.20 no.6, pp.921-926 |
103 |
원문
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학술지
|
2010 |
Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
윤성민 IEEE Electron Device Letters, v.31 no.2, pp.138-140 |
12 |
원문
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학술지
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2010 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
윤성민 Electrochemical and Solid-State Letters, v.13 no.5, pp.H141-H143 |
17 |
원문
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학술대회
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2010 |
Fabrication and Characterization of “See-Through” Nonvolatile Memory Transistors Using Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) and Transparent Oxide Semiconductor
윤성민 한국 반도체 학술 대회 (KCS) 2010, pp.61-62 |
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학술지
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2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
윤성민 Journal of Physics D : Applied Physics, v.42 no.24, pp.1-6 |
31 |
원문
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학술대회
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2009 |
Device Design Schemes and Electrical Characterization of Nonvolatile Memory Thin-Film Transistors with the Gate Structure of Al/P(VDF-TrFE)/Al2O3/ZnO
윤성민 International Conference on Solid State Devices and Materials (SSDM) 2009, pp.280-281 |
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학술지
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2009 |
Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
윤성민 Japanese Journal of Applied Physics, v.48 no.9, pp.1-4 |
3 |
원문
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학술지
|
2009 |
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
백강준 Solid-State Electronics, v.53 no.11, pp.1165-1168 |
22 |
원문
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학술지
|
2009 |
Improvement of Operational Stability in SET States of Phase-Change-Type Nonvolatile Memory Devices using Sb-Rich Phase of Ge-Sb-Te Alloys
윤성민 Solid-State Electronics, v.53 no.5, pp.557-561 |
6 |
원문
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학술대회
|
2009 |
Characterization of P(VDF-TrFE) Copolymer Films with Al2O3 Buffer Layer for Nonvolatile Memory Applications
정순원 한국반도체 학술 대회 (KCS) 2009, pp.1-2 |
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학술지
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2008 |
Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures
윤성민 Microelectronic Engineering, v.85 no.12, pp.2334-2337 |
11 |
원문
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학술지
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2008 |
Polarity Effects of Polymer Gate Electrets on Non-Volatile Organic Field-Effect Transistor Memory
백강준 Advanced Functional Materials, v.18 no.22, pp.3678-3685 |
252 |
원문
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학술지
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2008 |
Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers
윤성민 Journal of the Electrochemical Society, v.155 no.6, pp.H421-H425 |
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학술지
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2007 |
Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge-Sb-Te Alloy Films
윤성민 Japanese Journal of Applied Physics, v.46 no.11, pp.7225-7231 |
17 |
원문
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학술지
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2007 |
Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories
이승윤 Applied Surface Science, v.254 no.1, pp.312-315 |
3 |
원문
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학술지
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2007 |
Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films
윤성민 Applied Surface Science, v.254 no.1, pp.316-320 |
47 |
원문
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학술지
|
2007 |
Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories
윤성민 Integrated Ferroelectrics, v.93 no.1, pp.83-89 |
2 |
원문
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학술지
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2007 |
Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5
윤성민 Japanese Journal of Applied Physics, v.46 no.4, pp.L99-L102 |
18 |
원문
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학술지
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2006 |
Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations
윤성민 IEEE Electron Device Letters, v.27 no.6, pp.445-447 |
109 |
원문
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학술대회
|
2005 |
Research and Development on Next-Generation Nonvolatile Memory in ETRI
유병곤 Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4 |
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학술지
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2005 |
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
윤성민 Japanese Journal of Applied Physics, v.44 no.24-27, pp.L869-L872 |
35 |
원문
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학술대회
|
2002 |
Sense Amplifier Design for A NOR Type Non-Volatile Memory
양일석 International Technical Conference on Circuits Systems, Computers and Communications (ITC-CSCC) 2002, pp.1558-1559 |
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