Inventors

Cho Young Kyun, Roh Tae Moon, Kim Jongdae, Kwon Sung-Ku, Lee Dae Woo

Application No.

11182671 (2005.07.15)

Publication No.

20060105528 (2006.05.18)

Registration No.

7233018 (2007.06.19)

Country

UNITED STATES

Project Code

03MB5300, Development of semiconductor circuit design based on the nano-scaled device, Kim Jongdae

Abstract

Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.

KSP Keywords

Breakdown Voltage, Electric Field, Epitaxial layer, Field Effect Transistor(FET), High Voltage, Hot electrons, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Relaxed SiGe, Si layer, Si/SiGe heterojunction, Vertical electric field, field effect, heterojunction structure, metal oxide semiconductor, oxide semiconductor, potential well, saturation current, transconductance (gm)