등록 실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압 전계효과 트랜지스터 및 그 제조 방법

초록: Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial layer, and a Si epitaxial layer are stacked or a substrate on which a Si layer having a well region, a SiGe epitaxial layer, and a Si epitaxial layer are stacked is formed. For the device having the heterojunction structure, the number of conduction carriers through a potential well and the mobility of the carriers increase to reduce an on resistance, thus increasing saturation current. Also, an intensity of vertical electric field decreases so that a breakdown voltage can be maintained at a very high level. Further, a reduction in vertical electric field due to the heterojunction structure leads to a gain in transconductance (Gm), with the results that a hot electron effect is inhibited and the reliability of the device is enhanced.

KSP 제안 키워드: Breakdown voltage(BDV), Epitaxial layer, Field-effect transistors(FETs), High Voltage, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Oxide semiconductor, Relaxed SiGe, Si layer, Si/SiGe heterojunction, electric field, field effect, heterojunction structure, hot electrons, metal oxide semiconductor, potential well, saturation current, transconductance (gm), vertical electric field

패밀리 특허 목록
구분	특허	출원국	KIPRIS
등록	실리콘과 실리콘 게르마늄 이종 구조를 가지는 고전압 전계효과 트랜지스터 및 그 제조 방법	대한민국