Inventors

Tae-Youb Kim, Kim Kyung Hyun, Gun Yong Sung, Rae-Man Park

Application No.

11720987 (2005.11.14)

Publication No.

20090242913 (2009.10.01)

Registration No.

7671377 (2010.03.02)

Country

UNITED STATES

Abstract

Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.

KSP Keywords

Active Layer, Bragg reflector, Distributed Bragg reflector, Highly efficient, Silicon-based, Substrate structure, high efficiency, light emitting diodes(LED), light-emitting, n-Type, n-Type doping, p-Type