발명자

배성범, 이종무, 남은수, 주정진

출원번호

13473561 (2012.05.16)

공개번호

20120292634 (2012.11.22)

등록번호

9041012 (2015.05.26)

출원국

미국

초록

Disclosed are a microarray type nitride light emitting device and a method of manufacturing the same. More particularly, a uniform current distribution property is ensured by dividing a fine light emitting region by using a first transparent contact layer according to a resistance change property in heat treatment of a material of a transparent conducting oxide used as a transparent contact layer, and connecting the divided light emitting regions by using a second transparent contact layer.

KSP 제안 키워드

Conducting oxide, Contact layer, Distribution property, Light emitting device, Resistance change, Transparent conducting, Transparent conducting oxide(TCO), Transparent contact, Uniform Current Distribution, current distribution, galium-nitride, heat treatment, light-emitting, transparent contact layer

패밀리

 

패밀리 특허 목록

구분	특허	출원국	KIPRIS
등록	마이크로 어레이 형태의 질화물 발광 소자 및 그 제조 방법	대한민국	KIPRIS