Inventors

Bae Sung-Bum, Ju Jung Jin, Lee Jong-Moo, Eun Soo Nam

Application No.

13473561 (2012.05.16)

Publication No.

20120292634 (2012.11.22)

Registration No.

9041012 (2015.05.26)

Country

UNITED STATES

Abstract

Disclosed are a microarray type nitride light emitting device and a method of manufacturing the same. More particularly, a uniform current distribution property is ensured by dividing a fine light emitting region by using a first transparent contact layer according to a resistance change property in heat treatment of a material of a transparent conducting oxide used as a transparent contact layer, and connecting the divided light emitting regions by using a second transparent contact layer.

KSP Keywords

Conducting oxide, Contact layer, Distribution property, Heat Treatment, Light emitting devices, Transparent conducting, Transparent conducting oxide(TCO), Transparent contact, Uniform Current Distribution, current distribution, galium-nitride, light-emitting, resistance change, transparent contact layer