Patent

Registered VERTICAL CAPACITORS AND METHODS OF FORMING THE SAME

수직구조 캐패시터 및 수직구조 캐패시터의 형성 방법
Inventors
Kim Seong-Il, Eun Soo Nam, Mun Jae Kyoung, Jongmin Lee, Lee Sang-Heung, Min Byoung-Gue, Hyung Sup Yoon, Jong-Won Lim
Application No.
13618873 (2012.09.14)
Publication No.
20130134554 (2013.05.30)
Registration No.
8853821 (2014.10.07)
Country
UNITED STATES
Project Code
11ZB1100, Development support for customer-based convergence components, Eun Soo Nam
Abstract
Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.
KSP Keywords
Bottom surface, High capacitance, Input-Output, dielectric layer