Registered ANTI-RADIATION STRUCTURE, TEMPERATURE-PRESSURE COMPLEX SENSOR INCLUDING THE SAME AND HAVING ANTI-RADIATION PROPERTY, AND MANUFACTURING METHOD THEREOF

Inventors

Kim Seong Jun, Choi Choongi, Nguyen Tam Van, Yi Yoonsik, Shuvra Mondal, Min Bok Ki

Application No.

16566221 (2019.09.10)

Publication No.

20200170149 (2020.05.28)

Registration No.

11382244 (2022.07.05)

Country

UNITED STATES

Project Code

18JB1200, Development of non-reflection technology on free curved surfaces at visible wavelength range, Choi Choon Gi

18PB3600, Development of a real-time detection system for unidentified RCS leakage less than 0.5gpm, Choi Choon Gi

Abstract

Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.

KSP Keywords

Anti-radiation, Conductive film, Manufacturing method, Radiation property, Radiation shielding, Sensing material, Shielding property, Two-dimensional crystal, complex sensor, crystal structure, two-dimensional(2D)

Family

 

패밀리 특허 목록

Status	Patent	Country	KIPRIS
Registered	내방사선 구조체, 이를 포함하고 내방사선 특성을 갖는 온도-압력 복합 센서 및 그의 제조 방법	KOREA	KIPRIS
Registered	내방사선 구조체, 이를 포함하고 내방사선 특성을 갖는 온도-압력 복합 센서 및 그의 제조 방법	KOREA	KIPRIS
Registered	ANTI-RADIATION STRUCTURE, TEMPERATURE-PRESSURE COMPLEX SENSOR INCLUDING THE SAME AND HAVING ANTI-RADIATION PROPERTY, AND MANUFACTURING METHOD THEREOF	UNITED STATES