Patent

Registered 질화물 반도체 소자 및 이의 제조방법

Inventors
Application No.
2024-0068633 (2024.05.27)
Publication No.
10-2025-0109561 (2025.07.17)
Registration No.
2884352 (2025.11.06)
Country
KOREA
Project Code
23PH1400, Epitaxial growth and Device Technology Development for 2kV vertical GaN Power device, Hyung Seok Lee
, ,
KSP Keywords
Manufacturing method, Nitride semiconductor, semiconductor device
Family
 
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Status Patent Country KIPRIS
Registered 질화물 반도체 소자 및 이의 제조방법 KOREA