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구분 출원국
출원년도 ~ 키워드

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등록 실리콘온인슐레이터 기판을 이용한 열 방출 구조를 가진 반도체 장치 및 그의 제조방법

실리콘온인슐레이터 기판을 이용한 열 방출 구조를 가진 반도체 장치 및 그의 제조방법
이미지 확대
발명자
김상기, 김종대, 노태문, 유병곤, 박일용, 이대우, 양일석
출원번호
10322232 (2002.12.17)
공개번호
20040084726 (2004.05.06)
등록번호
6759714 (2004.07.06)
출원국
미국
협약과제
초록
Provided is a semiconductor fabrication technology; and, more particularly, to a semiconductor device having a heat release structure that uses a silicon-on-insulator (SOI) substrate, and a method for fabricating the semiconductor device. The device and method of the present research provides a semiconductor device having a high heat-release structure and high heat-release structure, and a fabrication method thereof. In the research, the heat and high-frequency noises that are generated in the integrated circuit are released outside of the substrate through the tunneling region quickly by forming an integrated circuit on a silicon-on-insulator (SOI) substrate, aiid removing a buried insulation layer under the integrated circuit to form a tunneling region. The heat-release efficiency can be enhanced much more, when unevenness is formed on the surfaces of the upper and lower parts of the tunneling region, or when the air or other gases having excellent heat conductivity is flown into the tunneling region.
KSP 제안 키워드
Fabrication method, Heat conductivity, Heat release, High Frequency(HF), Insulation layer, Integrated circuit, SOI substrate, Semiconductor Fabrication(Wafer Fab), Silicon On Insulator(SOI), Silicon-on-insulator (SOI) substrate, fabrication technology, semiconductor device