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성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 이중 구조의 나노점을 갖는 광전소자 및 그 제조방법

이중 구조의 나노점을 갖는 광전소자 및 그 제조방법
이미지 확대
발명자
심규환, 송영주, 김상훈, 강진영
출원번호
10329269 (2002.12.24)
공개번호
20040041144 (2004.03.04)
등록번호
6791105 (2004.09.14)
출원국
미국
협약과제
초록
An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
KSP 제안 키워드
Dual structure, Growth method, Hole injection layer(HIL), Light Emission, Nano-dot, electron injection, electron injection layer, hole injection, optoelectronic devices, semiconductor substrate