격자형 표류 영역 구조를 갖는 이디모스 소자 및 그 제조방법
이대우, 노태문, 박일용, 양일석, 김종대
- 6770529 (2004.08.03)
- The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.
- KSP 제안 키워드
- Breakdown voltage(BDV), Depletion Layer, Drain voltage, Extended drain, High concentration, Lattice structure, Low concentration, P-N junction, Resistance of the device, drift region