상세정보
등록 격자형 표류 영역 구조를 갖는 이디모스 소자 및 그 제조방법
- 출원번호
- 10611502 (2003.06.30)
- 공개번호
- 20040002196 (2004.01.01)
- 등록번호
- 6770529 (2004.08.03)
- 출원국
- 미국
- 협약과제
- 초록
- The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.
- KSP 제안 키워드
- Breakdown voltage(BDV), Depletion Layer, Drain voltage, Extended drain, High concentration, Lattice structure, Low concentration, P-N junction, Resistance of the device, drift region