상세정보
등록 원자층 증착법에서의 박막의 증착속도 및 박막 조밀도의 조절방법
- 출원번호
- 10645671 (2003.08.22)
- 등록번호
- 6730614 (2004.05.04)
- 출원국
- 미국
- 협약과제
- 초록
- The present invention relates to a method of forming a thin film in a semiconductor device. According the method, the thin film is formed by alternately repeating an atomic layer deposition (ALD) method and a plasma enhanced atomic layer deposition (PEALD) method and further by adjusting the ratio of repetition times of the methods, so that it is possible to adjust and estimate the growth rate, density, and material properties such as refraction index, dielectric constant, electric resistance, etc.
- KSP 제안 키워드
- Atomic Layer Deposition, Dielectric Constant, Electric resistance, Growth rate, Layer deposition, Plasma-enhanced, Plasma-enhanced atomic layer deposition, Repetition times, atomic layer, material properties, refraction index, semiconductor device, thin film(TF)