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구분 출원국
출원년도 ~ 키워드

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등록 전류제한구조를 갖는 반도체 광소자

전류제한구조를 갖는 반도체 광소자
이미지 확대
발명자
송현우, 박상희, 김종희, 신재헌, 한원석, 권오균, 주영구
출원번호
10699127 (2003.10.30)
공개번호
20040099857 (2004.05.27)
등록번호
7230276 (2007.06.12)
출원국
미국
협약과제
초록
Provided is a semiconductor optical device having a current-confined structure. The device includes a first semiconductor layer of a first conductivity type which is formed on a semiconductor substrate and includes one or more material layers, a second semiconductor layer which is formed on the first semiconductor layer and includes one or more material layers, and a third semiconductor layer of a second conductivity type which is formed on the second semiconductor layer and includes one or more material layers. One or more layers among the first semiconductor layer, the second semiconductor, and the third semiconductor layer have a mesa structure. A lateral portion of at least one of the material layers constituting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer is recessed, and the recess is partially or wholly filled with an oxide layer, a nitride layer or a combination of them. The semiconductor optical device having the current-confined region is mechanically reliable, highly thermally conductive, and commercially preferable and can be used in a wavelength range for optical communications.
KSP 제안 키워드
Confined structure, Mesa structure, Nitride layer, Optical devices, Oxide layer, Phase Change Material(PCM), Phase change, memory device, optical communications, semiconductor substrate, thermally conductive, wavelength range
패밀리
 
패밀리 특허 목록
구분 특허 출원국 KIPRIS
등록 전류 제한 구조를 갖는 반도체 광소자의 제조방법 대한민국 KIPRIS
등록 반도체 광소자와 그 제작 방법 미국
등록 전류제한구조를 갖는 반도체 광소자 일본