ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

특허 검색
구분 출원국
출원년도 ~ 키워드

상세정보

등록 감광막 패턴 형성 방법

감광막 패턴 형성 방법
이미지 확대
발명자
정문연, 전치훈
출원번호
10704624 (2003.11.12)
공개번호
20040137374 (2004.07.15)
등록번호
6951708 (2005.10.04)
출원국
미국
협약과제
초록
The present invention relates to a method of forming a photosensitive film pattern. It provides a method of forming a photosensitive film pattern capable of performing a photolithography process by blocking an opening of a high aspect ratio trench with a DFR film, during forming a semiconductor element and an MEMS element. In addition, it is possible to prevent the photoresist from flowing into the trench when the liquid photoresist is deposited by a spin coating method to form the photosensitive film pattern for metal pattern to apply electric signal from outside to inside of trench.
KSP 제안 키워드
Coating method, Electric signal, High aspect, High aspect ratio, Metal pattern, Photolithography process, Spin coating, aspect ratio, spin-coating method
패밀리
 
패밀리 특허 목록
구분 특허 출원국 KIPRIS
등록 감광막 패턴 형성 방법 대한민국 KIPRIS