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구분 출원국
출원년도 ~ 키워드

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등록 T 형 게이트 전극을 갖는 반도체소자 및 그 제조방법

T 형 게이트 전극을 갖는 반도체소자 및 그 제조방법
이미지 확대
발명자
안호균, 김해천, 문재경
출원번호
10723526 (2003.11.25)
공개번호
20040104443 (2004.06.03)
등록번호
6979871 (2005.12.27)
출원국
미국
협약과제
초록
A semiconductor device in which a silica aerogel layer having a very low dielectric constant is used as an insulating layer such that parasitic capacitance between a gate electrode and a source electrode in a field effect transistor having a T-shaped gate electrode, and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, source and drain electrodes, which are formed on the semiconductor substrate to make ohmic contact with the semiconductor substrate, a T-shaped gate electrode, which is formed between the source and drain electrodes on the semiconductor substrate, and an insulating layer including a silica aerogel layer, the silica aerogel layer being interposed between the gate electrode and the source and drain electrodes.
KSP 제안 키워드
Dielectric Constant, Field-effect transistors(FETs), Low dielectric, Low dielectric constant, Ohmic contact, Parasitic Capacitance, Silica aerogel, Source and drain, T-shaped, T-shaped gate, field effect, gate electrode, insulating layer, semiconductor device, semiconductor substrate