추출 격자 브래그 반사기와 결합된 추출 격자 분포 궤환 레이저 다이오드의 구조
박문호, 오수환, 고현성, 이철욱, 박상기, 이지면, 김기수, 김수현, 정영철
- 7130325 (2006.10.31)
- The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.
- KSP 제안 키워드
- Bragg reflector, Control area, Distributed Bragg reflector, Distributed feedback, Phase control, Sampled grating, Sampled grating distributed Bragg reflector(SG-DBR), Semiconductor lasers, Wavelength tunable, Wide band, optical efficiency, refraction index, tunable semiconductor laser